C
Research Areas
Biography and Research Information
OverviewAI-generated summary
Clifford A. King is a graduate student at the University of Arkansas at Fayetteville. His research focuses on materials science, with a recent publication in 2024 detailing a comprehensive material study of Ge grown by aspect ratio trapping on Si substrates. This work involved collaborations with Yuriy I. Mazur, Serhii Kryvyi, Sudip Acharya, and Fernando Maia de Oliveira, all from the University of Arkansas at Fayetteville. King's scholarly output includes one publication, which has received four citations, and he holds an h-index of 1.
Metrics
- h-index: 1
- Publications: 1
- Citations: 4
Selected Publications
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
Collaboration Network
Top Collaborators
Hryhorii Stanchu
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Serhii Kryvyi
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Stephen Margiotta
MIT Lincoln Laboratory (US)
1 shared publication
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Matthew S. Cook
MIT Lincoln Laboratory (US)
1 shared publication
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Joshua M. Grant
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Huong Tran
University of Arkansas at Fayetteville (US)
1 shared publication
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Sudip Acharya
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Yuriy I. Mazur
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Mourad Benamara
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Wei Du
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Baohua Li
University of Arkansas at Fayetteville (US)
1 shared publication
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Gregory J. Salamo
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Shui-Qing Yu
University of Arkansas at Fayetteville
1 shared publication
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
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