Clifford A King
Researcher
Also affiliated: Analog Devices (United States) (2024)
Graduate Student Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
Clifford A. King is a graduate student at the University of Arkansas at Fayetteville whose research focuses on materials science. His recent work includes a comprehensive material study of Germanium (Ge) grown by aspect ratio trapping on a Silicon (Si) substrate. King has published one paper, which has garnered four citations, and holds an h-index of one. He has collaborated with Yuriy I. Mazur, Serhii Kryvyi, Sudip Acharya, and Fernando Maia de Oliveira, all from the University of Arkansas at Fayetteville, on shared publications.
Metrics
- h-index: 1
- Publications: 1
- Citations: 4
Selected Publications
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
Collaboration Network
Top Collaborators
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
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