Ayesha Hassan Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

6 h-index 20 pubs 61 cited

Research Areas

GaN-based semiconductor devices and materials Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Advanced DC-DC Converters AI in cancer detection

Links

ORCID Research Group

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OverviewAI-generated summary

Ayesha Hassan's research focuses on semiconductor materials and devices, particularly those based on gallium nitride (GaN) and silicon carbide (SiC). Her work investigates the performance characteristics of these materials in power modules and magnetic field sensors. Recent publications include studies on double-sided cooled power modules with embedded decoupling capacitors and heterogeneously integrated double-sided cooling SiC power modules. Hassan also explores the temperature, sensitivity, and frequency response of AlN/GaN heterostructure micro-Hall effect sensors and the thermal stability of GaN-based magnetic field sensors. Additionally, her research extends to developing interface circuits for Hall-effect sensors, including a DC to 25 MHz current sensing interface and a fast interface circuit using multiple signal paths for high bandwidth Hall sensors. She has also published work on a DC to 42.8 MHz bandwidth current sensor readout interface for power electronics applications and has contributed to research on improving thyroid disorder diagnosis using ensemble learning models.

Metrics

  • h-index: 6
  • Publications: 20
  • Citations: 61

Selected Publications

  • Notch filter based Readout Interface for Hall-effect sensors for DC and High-Frequency Currents (2025) DOI
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
  • Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024) DOI
  • A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024) DOI
  • A Double-Sided Cooled Power Module With Embedded Decoupling Capacitors (2024) DOI
  • Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023) DOI
  • Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module (2023) DOI
  • Thermal stability study of gallium nitride based magnetic field sensor (2023) DOI
  • An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor (2023) DOI
  • A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications (2022) DOI
  • High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications (2022) DOI
  • A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module (2022) DOI
  • A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022) DOI

Collaborators

Researchers in the database who share publications

K. Asif Faruque University of Arkansas at Fayetteville 7 shared publications Asma Mahar University of Arkansas at Fayetteville 6 shared publications Satish Shetty University of Arkansas at Fayetteville 5 shared publications Yuriy I. Mazur University of Arkansas at Fayetteville 3 shared publications K. Asif Faruque University of Arkansas at Fayetteville 3 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 2 shared publications Mohammad Zamani‐Alavijeh University of Arkansas at Fayetteville 2 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 2 shared publications

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