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Current · Arkansas
Last published
2022
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OpenAlex · ORCID
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2026-10-07
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Abbas Sabbar
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Also affiliated: University of Technology - Iraq (2009)
8 h-index
20 pubs
155 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Abbas Sabbar's research focuses on the design and optimization of optocouplers and related semiconductor devices for high-temperature applications. His work investigates the performance of materials such as AlGaAs/GaAs LEDs and the development of Low-Temperature Co-fired Ceramics (LTCC) packaging for optocouplers, aiming to provide optical galvanic isolation in demanding thermal environments. Sabbar has explored the growth of pseudomorphic GeSn at low pressures, achieving specific Sn compositions. His publications also address the high-temperature analysis of optical coupling in integrated power modules.
Sabbar's scholarly output includes 21 publications, with a total of 144 citations, and an h-index of 8. He has collaborated with researchers at the University of Arkansas at Fayetteville, including Shui-Qing Yu, Oluwatobi Olorunsola, Emmanuel Wanglia, and Solomon Ojo, with whom he shares multiple publications. His most recent publications date to 2022, indicating recent activity in his field.
Metrics
- h-index: 8
- Publications: 20
- Citations: 155
Selected Publications
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications (2022)
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High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules (2022)
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Design and optimization of high temperature optocouplers as galvanic isolation (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Investigation of High Temperature LED and Photodetector from InGaN/GaN MQWs (2020)
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Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications (2020)
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High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules (2020)
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High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules (2019)
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Comparison Study of High-Temperature Spontaneous Emission Quantum Efficiency of Commercial LED Materials (2019)
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High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules (2019)
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High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications (2019)
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High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application (2019)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
18 shared publications
In database
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
Showing 5 of 18 shared publications
Syam Madhusoodhanan
University of Arkansas at Fayetteville (US)
14 shared publications
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
Showing 5 of 14 shared publications
Binzhong Dong
10 shared publications
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- Design and optimization of high temperature optocouplers as galvanic isolation
Showing 5 of 10 shared publications
Zhong Chen
University of Arkansas at Fayetteville (US)
8 shared publications
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules
- Design and optimization of high temperature optocouplers as galvanic isolation
- Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs
Showing 5 of 8 shared publications
Jiangbo Wang
8 shared publications
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications
Showing 5 of 8 shared publications
Stanley Atcitty
Sandia National Laboratories (US)
7 shared publications
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules
- High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates
Showing 5 of 7 shared publications
Robert Kaplar
Sandia National Laboratories (US)
7 shared publications
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules
- High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates
Showing 5 of 7 shared publications
Zhong Chen
University of Arkansas at Fayetteville
7 shared publications
In database
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications
Showing 5 of 7 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
6 shared publications
In database
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs
- High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates
- High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application
Showing 5 of 6 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
6 shared publications
In database
- High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
- High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications
- High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates
Showing 5 of 6 shared publications
Alan Mantooth
University of Arkansas at Fayetteville
6 shared publications
In database
- High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules
- Design and optimization of high temperature optocouplers as galvanic isolation
Showing 5 of 6 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
5 shared publications
- High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
- Investigation of High Temperature LED and Photodetector from InGaN/GaN MQWs
Joshua M. Grant
University of Arkansas at Fayetteville
4 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Jiangbo Wang
3 shared publications
- Design and optimization of high temperature optocouplers as galvanic isolation
- Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs
- Investigation of High Temperature LED and Photodetector from InGaN/GaN MQWs
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
3 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
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