Nirosh M. Eldose

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Post doctoral research

University of Arkansas

Also affiliated: Heriot-Watt University (2018–2019); Council of Scientific and Industrial Research (2014); CSIR National Physical Laboratory of India (2014)

4 h-index 27 pubs 56 cited

Research Areas

Links

ORCID Lab Website

OverviewAI-generated summary

Nirosh M. Eldose's research focuses on the growth and characterization of semiconductor materials for optoelectronic applications. His work has investigated germanium-tin (GeSn) alloys and quantum well structures, exploring their properties for use in integrated photonics platforms. Eldose has published on the growth of pseudomorphic GeSn with high tin composition and the optical and structural characteristics of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics. His research also includes enhancing carrier collection efficiency in GeSn single quantum wells, contributing to the development of all-group-IV photonics. Additionally, Eldose has examined the impact of annealing on the photoluminescence of GeSn alloys and the thermal stability of gallium nitride-based magnetic field sensors. He has a publication record of 27 works, with 53 citations and an h-index of 4. Eldose has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola, Fernando Maia de Oliveira, Hryhorii Stanchu, and Yuriy I. Mazur.

Metrics

h-index: 4
Publications: 27
Citations: 56

Positions

Post doctoral research 2021–present

University of Arkansas Libraries Nanoscale and Material Engineering ORCID

Selected Publications

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)

Crystal Growth & Design DOI OpenAlex
Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)

Journal of Physics D Applied Physics DOI OpenAlex
STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 1 citation DOI OpenAlex
Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)

Crystals DOI OpenAlex
Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)

SSRN Electronic Journal DOI OpenAlex
Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)

Applied Physics Letters 2 citations DOI OpenAlex
GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 1 citation DOI OpenAlex
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)

Crystal Growth & Design 7 citations DOI OpenAlex
MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)

Journal of Physics D Applied Physics 10 citations DOI OpenAlex
Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)

Applied Physics Letters 1 citation DOI OpenAlex
Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)

Crystal Growth & Design 2 citations DOI OpenAlex
Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 1 citation DOI OpenAlex
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)

Crystals 3 citations DOI OpenAlex
Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures (2023)

Crystal Growth & Design 9 citations DOI OpenAlex
Thermal stability study of gallium nitride based magnetic field sensor (2023)

Journal of Applied Physics 8 citations DOI OpenAlex