Match tier
Listed
Presence
Current · Arkansas
Last published
2022
Sources
OpenAlex · ORCID
Refreshed
2026-08-08
J
Research Areas
Biography and Research Information
OverviewAI-generated summary
Josh Kasitz researches modes of degradation in gallium nitride-based Hall-effect sensors, particularly at high temperatures. His work has involved collaborations with researchers at the University of Arkansas at Fayetteville, including Satish Shetty, David Huitink, Gregory J. Salamo, and Alexis Krone, with whom he has co-authored publications.
Kasitz's research output includes three publications, which have collectively received 14 citations. His scholarly profile is characterized by an h-index of 2. He has been active in research recently, with his most recent publication dating to 2022.
Metrics
- h-index: 2
- Publications: 3
- Citations: 14
Selected Publications
-
High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors (2022)
-
Concurrent Thermal and Electrical Property Effects of Nano-Enhanced Phase Change Material for High-Voltage Electronics Applications (2020)
-
Evaluation of Thermal and Electrical Properties of Nano-Enhanced PCM for Usage in High-Voltage Systems (2019)
Collaboration Network
Top Collaborators
Alexis Krone
University of Arkansas at Fayetteville
1 shared publication
In database
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
David Huitink
University of Arkansas at Fayetteville
1 shared publication
In database
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Hannah S. Alpert
Stanford University (US)
1 shared publication
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Debbie G. Senesky
Stanford University (US)
1 shared publication
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Satish Shetty
University of Arkansas at Fayetteville
1 shared publication
In database
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Gregory J. Salamo
University of Arkansas at Fayetteville
1 shared publication
In database
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
Similar Researchers
Based on overlapping research topics
Yong Qing Li
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials
Md Maksud Hossian
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials
Moath Alhejji
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials
Kz Shein
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials
Brian J. Sepko
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials
Simon S. Ang
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials