Hamood-Ur-Rehman
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Formerly Arkansas Graduate Assistant, University of Arkansas through 2029.
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Biography and Research Information
OverviewAI-generated summary
Hamood-Ur-Rehman's research focuses on the design and evaluation of advanced power modules, particularly those utilizing Gallium Nitride (GaN) and Silicon Carbide (SiC) semiconductor technologies. His work includes the development of low-inductance modules, such as flipchip GaN modules, and investigating efficient voltage balancing control methods for series-connected SiC MOSFETs. Recent publications detail the design of 650 V, 300 A GaN-based power modules featuring integrated drivers and optimized low-inductance layouts. He collaborates with researchers at the University of Arkansas at Fayetteville, including Xiaoqing Song, H. Alan Mantooth, Abu Shahir Md Khalid Hasan, and Mohammad Dehan Rahman.
Metrics
- Publications: 3
Positions
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Graduate Assistant 2024–2029University of Arkansas, Fayetteville Department of Electrical and Computer Engineering ORCID
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Electrical Engineer 2020–2024Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Faculty of Electrical Engineering ORCID
Selected Publications
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Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module (2026)
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A Simplified and Low-Cost Voltage Balancing Control Method for Series-Connected SiC MOSFETs (2026)
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Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
Collaboration Network
Top Collaborators
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified and Low-Cost Voltage Balancing Control Method for Series-Connected SiC MOSFETs
- A Simplified and Low-Cost Voltage Balancing Control Method for Series-Connected SiC MOSFETs
- A Simplified and Low-Cost Voltage Balancing Control Method for Series-Connected SiC MOSFETs
- A Simplified and Low-Cost Voltage Balancing Control Method for Series-Connected SiC MOSFETs
- Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module
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