Tanzila Akter
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Researcher
Unknown Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
Tanzila Akter's research focuses on the design and analysis of semiconductor devices, particularly those based on Gallium Nitride (GaN) and Gallium Oxide (Ga2O3). Her recent work includes the design of low parasitic inductance GaN HEMT flip-chip power modules and compact models for Ga2O3 Schottky barrier diodes. Akter also investigates the thermal analysis and modeling of Ga2O3 diode-based half-bridge power modules and evaluates the bonding strength of die attachment techniques for these devices. Her publications also touch upon performance analysis in MIMO-STBC systems, phytochemicals for glycemic control, and antibiotic sensitivity patterns of Streptococcus mutans. Akter has a h-index of 2 with 13 citations across 7 publications. She collaborates with researchers including Mohammad Dehan Rahman, Abu Shahir Md Khalid Hasan, Xiaoqing Song, and Kevin Chen, all affiliated with the University of Arkansas at Fayetteville.
Metrics
- h-index: 2
- Publications: 7
- Citations: 14
Selected Publications
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Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
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Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
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Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
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Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025)
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Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices (2024)
Collaboration Network
Top Collaborators
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
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