Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-08
D
Dinesh Baral
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Postdoc Fellow
Also affiliated: University of Wyoming (2020–2026); Jawaharlal Nehru University (2015); Center for NanoScience (2026); Samsung (United States) (1999); Wyoming Department of Education (2020–2024)
Postdoc Researcher
6 h-index
26 pubs
102 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Dinesh Baral's research focuses on the development and characterization of advanced semiconductor materials and devices, particularly those with applications in sensing technologies. His work investigates the performance characteristics of materials such as AlN/GaN heterostructures and GeSn alloys under varying environmental conditions, including temperature and frequency.
Baral has published research on magnetic field sensors, including micro-Hall effect sensors designed for extreme environments, and has explored the photoluminescence properties of strained GeSn/Ge multiple quantum well structures. His publications also address the coexistence of magnetism and paramagnetic singularities in doped WTe2. He has a citation count of 99 and an h-index of 6 across 25 publications. Baral collaborates extensively with researchers at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola and Nirosh M. Eldose, with whom he shares multiple publications.
Metrics
- h-index: 6
- Publications: 26
- Citations: 102
Selected Publications
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Te Vacancies Induced Magnetic Domains and Domain Wall Stabilization on Fe <sub>3</sub> GeTe <sub>2</sub> Surfaces (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>WTe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> (2024)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
6 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 6 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Showing 5 of 6 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
5 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Hryhorii Stanchu
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Satish Shetty
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Serhii Kryvyi
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Diandian Zhang
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Savannah R. Eisner
Columbia University (US)
3 shared publications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
H. Alan Mantooth
University of Arkansas at Fayetteville
3 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Wei Du
University of Arkansas at Fayetteville
3 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Ayesha Hassan
University of Arkansas at Fayetteville
2 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Anand Vikas Lalwani
Vaughn College of Aeronautics and Technology (US)
2 shared publications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
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