Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
D
Dinesh Baral
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Postdoc Fellow
Also affiliated: University of Wyoming (2020–2026); Jawaharlal Nehru University (2015)
6 h-index
25 pubs
100 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Dinesh Baral's research focuses on the development and application of nanomaterials for biosensing and the characterization of novel semiconductor materials. He has investigated iron oxide nanorods and nanoparticles as platforms for detecting Vibrio cholerae, aiming to create biocompatible sensing solutions. His work also extends to the study of advanced semiconductor heterostructures, including GeSn/Ge multiple quantum wells and AlN/GaN micro-Hall effect sensors, exploring their properties for potential electronic applications. Baral has published on topics ranging from magnetic materials like Fe-doped WTe2 to the growth and characterization of strained semiconductor structures. He collaborates with several researchers at the University of Arkansas at Fayetteville, including Nirosh M. Eldose and Fernando Maia de Oliveira, with whom he has co-authored multiple publications. His scholarly contributions are reflected in an h-index of 6 and over 100 citations.
Metrics
- h-index: 6
- Publications: 25
- Citations: 100
Positions
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Postdoc Fellow 2023–presentUniversity of Arkansas at Fayetteville ORCID
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Graduate Assistant 2017–2023University of Wyoming Department of Physics and Astronomy ORCID
Selected Publications
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Te Vacancies Induced Magnetic Domains and Domain Wall Stabilization on Fe 3 GeTe 2 Surfaces (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped WTe 2 (2024)
Collaboration Network
Top Collaborators
Nirosh M. Eldose
University of Arkansas at Fayetteville
12 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 12 shared publications
Diandian Zhang
University of Arkansas at Fayetteville
10 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 10 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
8 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 8 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 7 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 7 shared publications
Wei Du
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 7 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
6 shared publications
In database
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Showing 5 of 6 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Showing 5 of 6 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Shui-Qing Yu
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Satish Shetty
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
H. Alan Mantooth
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Mourad Benamara
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Savannah R. Eisner
Columbia University (US)
3 shared publications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Debbie G. Senesky
Vaughn College of Aeronautics and Technology (US)
3 shared publications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
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