D
Dinesh Baral Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Postdoc Fellow
postdoc
5 h-index
24 pubs
85 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Dinesh Baral's research focuses on the development and characterization of advanced semiconductor materials and devices. His work includes investigating the properties of III-nitride heterostructures for magnetic field sensing applications, with a particular emphasis on their performance in extreme environments. Baral has published on AlN/GaN heterostructure micro-Hall effect sensors, examining their temperature sensitivity and frequency response. His research also extends to GeSn alloys, exploring their growth via molecular beam epitaxy and characterizing their photoluminescence emissions and quantum well structures. He has collaborated with researchers at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola and Nirosh M. Eldose, contributing to a shared publication record. Baral's scholarship metrics include an h-index of 4 with 20 total publications and 80 total citations.
Metrics
- h-index: 5
- Publications: 24
- Citations: 85
Selected Publications
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> (2024)
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
8 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 8 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
8 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Showing 5 of 8 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Showing 5 of 7 shared publications
Yuriy I. Mazur
6 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 6 shared publications
Fernando Maia de Oliveira
6 shared publications
In database
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
Showing 5 of 6 shared publications
Diandian Zhang
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Showing 5 of 6 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Showing 5 of 6 shared publications
Mohammad Zamani‐Alavijeh
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Neutralizing Optical Defects in GeSn
Satish Shetty
University of Arkansas at Fayetteville
4 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Serhii Kryvyi
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Savannah R. Eisner
Columbia University (US)
3 shared publications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
H. Alan Mantooth
University of Arkansas at Fayetteville
3 shared publications
In database
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Mourad Benamara
3 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Wei Du
University of Arkansas at Fayetteville
3 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Yuri Dahnovsky
Wyoming Department of Education (US)
2 shared publications
- Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
- Scanning Tunneling Microscopy and Spectroscopy (STM/S) Reveals Small Energy Gap of CrBr 3
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