A
Abbas Sabbar Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
8 h-index
21 pubs
148 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Abbas Sabbar's research focuses on the design and optimization of optocouplers and related semiconductor devices for high-temperature applications. His work investigates the performance of materials such as AlGaAs/GaAs LEDs and the development of Low-Temperature Co-fired Ceramics (LTCC) packaging for optocouplers, aiming to provide optical galvanic isolation in demanding thermal environments. Sabbar has explored the growth of pseudomorphic GeSn at low pressures, achieving specific Sn compositions. His publications also address the high-temperature analysis of optical coupling in integrated power modules.
Sabbar's scholarly output includes 21 publications, with a total of 144 citations, and an h-index of 8. He has collaborated with researchers at the University of Arkansas at Fayetteville, including Shui-Qing Yu, Oluwatobi Olorunsola, Emmanuel Wanglia, and Solomon Ojo, with whom he shares multiple publications. His most recent publications date to 2022, indicating recent activity in his field.
Metrics
- h-index: 8
- Publications: 21
- Citations: 148
Selected Publications
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications (2022)
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High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules (2022)
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Design and optimization of high temperature optocouplers as galvanic isolation (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
5 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Design and optimization of high temperature optocouplers as galvanic isolation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Syam Madhusoodhanan
University of Arkansas at Fayetteville (US)
3 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Design and optimization of high temperature optocouplers as galvanic isolation
Joshua M. Grant
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Grey Abernathy
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Solomon Ojo
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Emmanuel Wanglia
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Samir K. Saha
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Murtadha Alher
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Baohua Li
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Huong Tran
University of Arkansas at Fayetteville (US)
2 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
Binzhong Dong
2 shared publications
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Design and optimization of high temperature optocouplers as galvanic isolation
Alan Mantooth
University of Arkansas at Fayetteville (US)
2 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
Zhong Chen
University of Arkansas at Fayetteville (US)
2 shared publications
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
Pengyu Lai
University of Arkansas at Fayetteville
2 shared publications
In database
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
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