Abbas Sabbar
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Researcher
Also affiliated: University of Technology - Iraq (2009)
Faculty Researcher
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Abbas Sabbar's research focuses on the design and optimization of optocouplers and related semiconductor devices for high-temperature applications. His work investigates the performance of materials such as AlGaAs/GaAs LEDs and the development of Low-Temperature Co-fired Ceramics (LTCC) packaging for optocouplers, aiming to provide optical galvanic isolation in demanding thermal environments. Sabbar has explored the growth of pseudomorphic GeSn at low pressures, achieving specific Sn compositions. His publications also address the high-temperature analysis of optical coupling in integrated power modules.
Sabbar's scholarly output includes 21 publications, with a total of 144 citations, and an h-index of 8. He has collaborated with researchers at the University of Arkansas at Fayetteville, including Shui-Qing Yu, Oluwatobi Olorunsola, Emmanuel Wanglia, and Solomon Ojo, with whom he shares multiple publications. His most recent publications date to 2022, indicating recent activity in his field.
Metrics
- h-index: 8
- Publications: 21
- Citations: 155
Selected Publications
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications (2022)
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High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules (2022)
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Design and optimization of high temperature optocouplers as galvanic isolation (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Investigation of High Temperature LED and Photodetector from InGaN/GaN MQWs (2020)
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Growth and characterization of low-temperature Si<sub>1-x</sub>Sn<sub>x</sub> on Si using plasma enhanced chemical vapor deposition (2020)
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications (2020)
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High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules (2020)
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High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules (2019)
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Comparison Study of High-Temperature Spontaneous Emission Quantum Efficiency of Commercial LED Materials (2019)
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High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules (2019)
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High-Temperature Analysis of GaN-Based Blue-LEDs for Future Power Electronic Applications (2019)
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High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application (2019)
Collaboration Network
Top Collaborators
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Design and optimization of high temperature optocouplers as galvanic isolation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Design and optimization of high temperature optocouplers as galvanic isolation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Design and optimization of high temperature optocouplers as galvanic isolation
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Design and optimization of high temperature optocouplers as galvanic isolation
- High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
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