A
Abdulla Said Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
7 h-index
11 pubs
81 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Abdulla Said's research focuses on the development and characterization of novel semiconductor materials for optoelectronic applications, particularly within the realm of integrated photonics. His work investigates group-IV semiconductor alloys, such as SiGeSn, for their potential in creating advanced photonic integrated circuits on silicon platforms. Said has published on the optical and structural properties of GeSn/SiGeSn multiple quantum wells and single quantum wells, exploring their application in infrared optoelectronics and enhancing carrier collection efficiency for all-group-IV photonics.
His research also extends to the growth of these materials, including Ge and direct bandgap GeSn, on GaAs substrates using molecular beam epitaxy. Said has studied mid-infrared lasers based on SiGeSn alloys, including those with dual-wavelength emission capabilities. His investigations also examine the impact of annealing processes on the photoluminescence of GeSn alloys and the role of dislocations in Sn diffusion during low-temperature annealing.
Metrics
- h-index: 7
- Publications: 11
- Citations: 81
Selected Publications
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
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Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
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Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022)
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Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys (2021)
Collaboration Network
Top Collaborators
Hryhorii Stanchu
University of Arkansas at Fayetteville
10 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 10 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
10 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 10 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
9 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 9 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 8 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 8 shared publications
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
6 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 6 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Wei Du
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
Sylvester Amoah
University of Arkansas at Fayetteville
5 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Grey Abernathy
University of Arkansas at Fayetteville (US)
4 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Joshua M. Grant
University of Arkansas at Fayetteville
4 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
3 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Samir K. Saha
University of Arkansas at Fayetteville (US)
3 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Yue‐Tong Jheng
National Chung Cheng University (TW)
3 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
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