Abdulla Said Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

6 h-index 11 pubs 71 cited

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Biography and Research Information

OverviewAI-generated summary

Abdulla Said's research focuses on the development and characterization of semiconductor materials, particularly Group IV alloys like SiGeSn, for optoelectronic applications. His work investigates the optical and structural properties of multiple quantum wells composed of GeSn/SiGeSn, aiming to enhance carrier collection efficiency for integrated photonics.

His publications explore topics such as SiGeSn quantum wells for photonics integrated circuits, mid-infrared lasers with dual wavelength emission, and the impact of annealing on photoluminescence in GeSn alloys. He also studies the growth of Ge and GeSn on GaAs substrates and the role of dislocations on Sn diffusion during annealing. Said collaborates with researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Solomon Ojo, Shui-Qing Yu, and Sudip Acharya, with whom he has multiple shared publications.

Metrics

  • h-index: 6
  • Publications: 11
  • Citations: 71

Selected Publications

  • High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023) DOI
  • Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023) DOI
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023) DOI
  • Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022) DOI
  • Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022) DOI
  • Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022) DOI
  • Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys (2021) DOI

Collaborators

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