Match tier
Likely match
Presence
Current · Arkansas
Last published
2024
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
K
K. Asif Faruque
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Unknown Researcher
2 h-index
4 pubs
21 cited
Research Areas
Biography and Research Information
OverviewAI-generated summary
K. Asif Faruque investigates semiconductor materials and devices, with a focus on silicon carbide (SiC) technology. His recent publications explore the characterization of SiC MOSFETs at high temperatures and the development of SiC CMOS technology for harsh environments. Faruque has also published on interface circuits for Hall-effect and current sensors, including work on DC to 25 MHz current sensing interfaces and fast interface circuits using multiple signal paths for high bandwidth Hall sensors. His research includes the design and assembly of high-temperature LTCC components for SiC BJT-based negative charge pumps and heterogeneously integrated double-sided cooling SiC power modules. Faruque collaborates with researchers at the University of Arkansas at Fayetteville, including Ayesha Hassan, Asma Mahar, H. Alan Mantooth, and Satish Shetty.
Metrics
- h-index: 2
- Publications: 4
- Citations: 21
Selected Publications
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Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules (2025)
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Development, Integration, and Flight Testing of a Silicon Carbide Propulsion Drive for a Hybrid Electric Aerospace Application (2025)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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A review of silicon carbide CMOS technology for harsh environments (2024)
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A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024)
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Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023)
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Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module (2023)
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An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor (2023)
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High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications (2022)
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A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module (2022)
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A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022)
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High-temperature LTCC assembly and design of SiC BJT-based negative charge pump (2021)
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Gate Driver Design in a 1 μm SiC CMOS Process for Heterogeneous Integration Inside SiC Power Module (2020)
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Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning (2019)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
10 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Showing 5 of 10 shared publications
Ayesha Hassan
University of Arkansas at Fayetteville
7 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Showing 5 of 7 shared publications
Asma Mahar
University of Arkansas at Fayetteville
4 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
- High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications
- An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor
Riya Paul
University of Arkansas at Fayetteville (US)
4 shared publications
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
- Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
Affan Abbasi
University of Arkansas at Fayetteville (US)
2 shared publications
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- High-temperature LTCC assembly and design of SiC BJT-based negative charge pump
Alan Mantooth
University of Arkansas at Fayetteville
2 shared publications
In database
- High-temperature LTCC assembly and design of SiC BJT-based negative charge pump
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
Satish Shetty
University of Arkansas at Fayetteville
2 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
Gregory J. Salamo
University of Arkansas at Fayetteville
2 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors
Yuyang Wang
University of Arkansas at Fayetteville
2 shared publications
In database
- Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
Hui Wang
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Pengyu Lai
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Zhong Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Sajib Roy
University of Arkansas at Fayetteville (US)
1 shared publication
- High-temperature LTCC assembly and design of SiC BJT-based negative charge pump
Sama Salehi Vala
Stony Brook University (US)
1 shared publication
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
Abdul Basit Mirza
Stony Brook University (US)
1 shared publication
- A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module
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