Match tier
Confirmed
Presence
Current · Arkansas
Last published
2022
Sources
OpenAlex · ORCID
Refreshed
2026-08-17
E
Emmanuel Wanglia
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Graduate Student Researcher
1 h-index
2 pubs
19 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Emmanuel Wanglia is a graduate student at the University of Arkansas at Fayetteville whose research focuses on the growth of semiconductor materials. His work has involved the low-pressure growth of pseudomorphic Germanium-Tin (GeSn) alloys, specifically investigating compositions with a Sn concentration of 16.7%. Wanglia has co-authored two publications on this topic, with the most recent appearing in 2022. His research collaborations include work with Nirosh M. Eldose, Solomon Ojo, Murtadha Alher, and Abbas Sabbar, all affiliated with the University of Arkansas at Fayetteville, with whom he shares two co-authored publications. Wanglia's academic profile includes an h-index of 1 and a total of 19 citations across his two publications.
Metrics
- h-index: 1
- Publications: 2
- Citations: 19
Selected Publications
-
Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
-
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
Collaboration Network
Top Collaborators
Joshua M. Grant
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Grey Abernathy
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Solomon Ojo
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Samir K. Saha
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Abbas Sabbar
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Murtadha Alher
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Baohua Li
The Ark
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Shui-Qing Yu
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Sylvester Amoah
University of Arkansas at Fayetteville
1 shared publication
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
Wei Du
Wilkes University
1 shared publication
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
Sylvester Amoha
University of Arkansas at Fayetteville
1 shared publication
In database
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Wei Du
Wilkes University (US)
1 shared publication
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
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