J. A. Bass
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: Goddard Space Flight Center (1970–1978); Hi-Z Technology (United States) (2003)
Faculty Researcher
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
J. A. Bass is a faculty member at the University of Arkansas at Fayetteville whose research focuses on semiconductor materials and devices. Bass has published work on electrically injected germanium-tin (GeSn) lasers with wavelengths extending to 2.7 micrometers, as well as the impact of nonlinear effects in silicon for integrated microwave-photonic applications. These publications demonstrate a focus on the development and application of advanced semiconductor technologies for optoelectronic and photonic systems. Bass has collaborated with researchers Shui-Qing Yu, Wei Du, Yiyin Zhou, and Gregory J. Salamo, all from the University of Arkansas at Fayetteville, on shared publications, indicating an active research network within the institution.
Metrics
- h-index: 3
- Publications: 12
- Citations: 103
Selected Publications
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Impact of nonlinear effects in Si towards integrated microwave-photonic applications (2021)
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The effect of two-photon absorption on the dynamic range of integrated microwave photonics links (2020)
Collaboration Network
Top Collaborators
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of nonlinear effects in Si towards integrated microwave-photonic applications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
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