Md Helal Uddin Maruf
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Researcher
Also affiliated: University of Dhaka (2015); University of Missouri–St. Louis (2019–2020); Center for Nanoscale Science and Technology (2022)
Faculty Researcher
Research Areas
Biomedical Subjects
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Biography and Research Information
OverviewAI-generated summary
Md Helal Uddin Maruf's research focuses on the modeling and characterization of semiconductor materials for solar cell applications. His work investigates the temperature dependence and structural features of Indium Gallium Nitride (InGaN) based solar cells, examining both strained and relaxed states. He has published studies on double-graded and V-graded InGaN solar cell structures, as well as research into the effects of periodic InGaN graded structures on optical properties.
Further research includes the design and characterization of high-temperature half-bridge modules. Maruf also explores the controlled formation of Indium Nitride (InN) quantum dots on sapphire substrates using droplet epitaxy. His work has contributed to understanding the efficiency of InGaN p-n-p-n homojunction solar cells. He has a h-index of 4 with 13 publications and 146 citations.
Metrics
- h-index: 4
- Publications: 13
- Citations: 148
Selected Publications
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Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy (2023)
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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
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Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
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Study of simulations of double graded InGaN solar cell structures (2022)
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Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021)
Collaboration Network
Top Collaborators
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 7 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
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