Solomon Ojo Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

10 h-index 39 pubs 608 cited

Research Areas

Semiconductor materials and devices Photonic and Optical Devices Advancements in Semiconductor Devices and Circuit Design Quantum Dots Synthesis And Properties

Links

Lab Website

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OverviewAI-generated summary

Solomon Ojo's research focuses on the development and characterization of germanium-tin (GeSn) based semiconductor materials and devices for optoelectronic applications, particularly in the mid-infrared spectrum. His work has explored GeSn quantum wells and lasers integrated onto silicon photonic platforms. Publications detail the growth of pseudomorphic GeSn with high tin compositions and the electrical injection of GeSn lasers emitting at wavelengths up to 2.7 μm, operating at temperatures as high as 140 K. His research also investigates optical confinement factors and carrier collection efficiency in GeSn structures, aiming for advancements in all-group-IV photonics. Ojo collaborates with Shui-Qing Yu, Hryhorii Stanchu, Wei Du, and Sudip Acharya at the University of Arkansas at Fayetteville on these investigations. He has published 39 papers, accumulating 608 citations and an h-index of 10.

Metrics

  • h-index: 10
  • Publications: 39
  • Citations: 608

Selected Publications

  • Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025) DOI
  • Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition (2025) DOI
  • Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023) DOI
  • Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023) DOI
  • Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022) DOI
  • Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022) DOI
  • Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022) DOI
  • Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022) DOI
  • Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022) DOI
  • Silicon-based electrically injected GeSn lasers (2022) DOI
  • Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021) DOI
  • Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021) DOI
  • Electrically injected GeSn lasers with peak wavelength up to 2.7  μm (2021) DOI

Collaborators

Researchers in the database who share publications

Shui-Qing Yu University of Arkansas at Fayetteville 14 shared publications Hryhorii Stanchu University of Arkansas at Fayetteville 13 shared publications Wei Du University of Arkansas at Fayetteville 13 shared publications Sudip Acharya University of Arkansas at Fayetteville 11 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 9 shared publications Abdulla Said University of Arkansas at Fayetteville 9 shared publications Sylvester Amoah University of Arkansas at Fayetteville 9 shared publications Joshua M. Grant University of Arkansas at Fayetteville 9 shared publications

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