G. J. Salamo

Researcher

University of Arkansas for Medical Sciences

faculty

15 h-index 53 pubs 789 cited

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Biography and Research Information

OverviewAI-generated summary

G. J. Salamo's research focuses on the optical and structural properties of semiconductor materials, particularly quantum wells and dots. Recent publications investigate the role of quantum dots in enhancing effective lifetimes in GaAs bulk and the effects of disorder on the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>GaAs</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Sb</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:mrow></mml:math> quantum wells. Additional work examines strain relaxation and defect density evolution in MBE-grown GeSn alloys on Ge(001). Salamo has published 53 papers, accumulating 789 citations and an h-index of 15. Collaborations include shared publications with researchers from the University of Arkansas at Fayetteville, such as Serhii Kryvyi, Hryhorii Stanchu, G. M. Jacobsen, and Morgan E. Ware.

Metrics

  • h-index: 15
  • Publications: 53
  • Citations: 789

Selected Publications

  • Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025) DOI
  • Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025) DOI
  • Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk (2024) DOI

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