Mengxuan Jiang
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Also affiliated: Central South University (2021); Chongqing University (2019–2020); Hunan University (2015–2016)
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Biography and Research Information
OverviewAI-generated summary
Mengxuan Jiang's research interests include the characterization and converter design utilizing 6.5 kV silicon carbide MOSFETs, with a recent publication in this area in 2024. Jiang has also investigated the impact of gate bias on reverse recovery characteristics of these devices across a range of temperatures. Another research focus involves data reconciliation for the estimation of feeding composition in industrial processes, as evidenced by a 2021 publication. Additionally, Jiang has contributed to studies on the effects of exercise interventions on motor function and gait in stroke patients, with a publication in 2022. Jiang's scholarly output includes 16 publications with 127 citations and an h-index of 5. Key collaborators at the University of Arkansas at Fayetteville include Xinyuan Du, Abu Shahir Md Khalid Hasan, Eric Allee, and Xiaoling Li.
Metrics
- h-index: 5
- Publications: 15
- Citations: 132
Selected Publications
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Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range (2024)
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Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs (2024)
Collaboration Network
Top Collaborators
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs
- Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
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