Perry C. Grant

Researcher

University of Arkansas at Fayetteville

faculty

16 h-index 61 pubs 1,122 cited

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Biography and Research Information

OverviewAI-generated summary

Perry C. Grant's research focuses on the development and characterization of semiconductor materials for infrared detection and sensing applications. His work involves the synthesis of novel materials, including mid-wave infrared (MWIR) InGaAs/InAsSb superlattices and quinary GaInAsSbBi alloys, investigated using techniques such as photoluminescence and minority carrier lifetime measurements. Grant has published studies on the utility of Shockley-Read-Hall analysis for extracting defect properties from semiconductor data and the Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum wells.

His research has led to the demonstration of a 4.32 μm cutoff InAsSbBi photodetector, a lattice-matched random alloy solution for MWIR sensing. Further investigations include the development of monolithic Germanium-Tin on Si avalanche photodiodes for infrared detection and the synthesis of high Sn content GeSiSn semiconductors on Si for direct band gap applications in the MWIR spectrum. Grant has a publication record of 61 papers, with 1,122 citations and an h-index of 16. He collaborates with researchers at the University of Arkansas at Fayetteville, including Wei Du, Sylvester Amoah, Justin Rudie, and Shui-Qing Yu.

Metrics

  • h-index: 16
  • Publications: 61
  • Citations: 1,122

Selected Publications

  • Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025) DOI
  • X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025) DOI
  • Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021) DOI

Collaborators

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