Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
P
Pijush K. Ghosh
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
PhD Student
Also affiliated: University of Hyderabad (1997–1998)
5 h-index
19 pubs
95 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Pijush K. Ghosh's research focuses on the optical and electronic properties of nanostructures and semiconductor materials. His work includes calculating the plasmonic properties of gold nanobars and investigating emission mechanisms in ultrathin semiconductor layers. Ghosh has also studied high-temperature capacitors utilizing aluminum nitride as a dielectric and explored low-resistance Ohmic contacts for graded indium gallium nitride.
His publications investigate hybrid gold/silver nanostructures for plasmonic emission and the luminescence properties of gallium nitride/indium gallium nitride quantum well structures. Additionally, his research has examined the effects of indium surface coverage on indium nitride/gallium nitride quantum well growth. Ghosh has collaborated with Morgan E. Ware, Yuriy I. Mazur, Fernando Maia de Oliveira, and Reem Alhelais at the University of Arkansas at Fayetteville.
Metrics
- h-index: 5
- Publications: 19
- Citations: 95
Positions
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PhD Student 2013–presentUniversity of Arkansas Electrical Engineering ORCID
Selected Publications
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Capacitors for high temperature systems, methods of forming same, and applications of same (2026)Journal of the Arkansas Academy of Science OpenAlex
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Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells (2024)
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Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023)
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Low resistance Ohmic contacts to graded InGaN (2022)
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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift (2021)
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
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Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering (2021)
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Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells) (2020)
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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers (2020)
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Plasmonic emission of hybrid Au/Ag bullseye nanostructures (2019)
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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix (2018)
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High temperature capacitors using AlN grown by MBE as the dielectric (2018)
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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures (2018)
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Calculated thickness dependent plasmonic properties of gold nanobars in the visible to near-infrared light regime (2017)
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Plasmonic resonance shift for various nanodevice geometries (2016)
Collaboration Network
Top Collaborators
Morgan E. Ware
University of Arkansas at Fayetteville
13 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- High temperature capacitors using AlN grown by MBE as the dielectric
- Plasmonic emission of hybrid Au/Ag bullseye nanostructures
- Low resistance Ohmic contacts to graded InGaN
Showing 5 of 13 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
8 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- High temperature capacitors using AlN grown by MBE as the dielectric
- Plasmonic emission of hybrid Au/Ag bullseye nanostructures
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
Showing 5 of 8 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
- Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Showing 5 of 7 shared publications
Mirsaeid Sarollahi
University of Arkansas at Fayetteville
6 shared publications
In database
- High temperature capacitors using AlN grown by MBE as the dielectric
- Low resistance Ohmic contacts to graded InGaN
- Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)
- Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Showing 5 of 6 shared publications
Desalegn T. Debu
University of Arkansas at Fayetteville
4 shared publications
In database
- Calculated thickness dependent plasmonic properties of gold nanobars in the visible to near-infrared light regime
- High temperature capacitors using AlN grown by MBE as the dielectric
- Plasmonic emission of hybrid Au/Ag bullseye nanostructures
- Plasmonic resonance shift for various nanodevice geometries
Joseph B. Herzog
University of Indianapolis (US)
3 shared publications
- Calculated thickness dependent plasmonic properties of gold nanobars in the visible to near-infrared light regime
- Plasmonic emission of hybrid Au/Ag bullseye nanostructures
- Plasmonic resonance shift for various nanodevice geometries
Chen Li
University of Arkansas at Fayetteville
3 shared publications
In database
- High temperature capacitors using AlN grown by MBE as the dielectric
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Yurii Maidaniuk
University of Arkansas at Fayetteville
3 shared publications
In database
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
- Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers
Manal A. Aldawsari
University of Arkansas at Fayetteville
3 shared publications
In database
- Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)
- Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
3 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
David French
University of Arkansas at Fayetteville
2 shared publications
In database
- Calculated thickness dependent plasmonic properties of gold nanobars in the visible to near-infrared light regime
- Plasmonic resonance shift for various nanodevice geometries
Satish Shetty
University of Arkansas at Fayetteville
2 shared publications
In database
- High temperature capacitors using AlN grown by MBE as the dielectric
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
Thomas P. White
University of Arkansas at Fayetteville (US)
2 shared publications
- High temperature capacitors using AlN grown by MBE as the dielectric
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
Timothy A. Morgan
Naval Surface Warfare Center (US)
2 shared publications
- Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Rahul Kumar
University of Arkansas at Fayetteville (US)
2 shared publications
- Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
- High temperature capacitors using AlN grown by MBE as the dielectric
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