C
Chen Li Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
Researcher
faculty
Food Science
13 h-index
52 pubs
476 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Chen Li's research focuses on the growth and characterization of semiconductor materials, particularly those relevant to optoelectronic devices. His work investigates methods for enhancing carrier confinement and tuning bandgaps in materials such as AlGaN, Ge, GeSn, and InAs/AlAs superlattices. These investigations often employ molecular beam epitaxy (MBE), a technique for depositing thin films with atomic-level control.
Li has published research on the growth of germanium and germanium-tin alloys on various substrates, including GaAs and sapphire, exploring strain effects and annealing-induced improvements in material properties. He has also studied the development of deep-ultraviolet light-emitting diodes based on AlGaN, focusing on the role of compositionally graded layers in device performance. His scholarship metrics include an h-index of 12, with 52 total publications and 461 citations.
Li has served as PI or Co-PI on two federal grants totaling $538,030. These include an NSF grant for developing high-order algorithms for fluid dynamics simulations and an NIH/NIDA grant focused on tunable multi-timescale cortical dynamics. His collaborations at the University of Arkansas at Fayetteville include researchers such as Yuriy I. Mazur, Fernando Maia de Oliveira, Shui-Qing Yu, and Hryhorii Stanchu.
Metrics
- h-index: 13
- Publications: 52
- Citations: 476
Selected Publications
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
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Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
Federal Grants 2 $538,030 total
NIH/National Institute on Drug Abuse
Co-PI
Aug 2024 - May 2027
Tunable multi-timescale cortical dynamics: fundamental theory and practical tools
Collaboration Network
Top Collaborators
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
7 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
6 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Showing 5 of 6 shared publications
Yan‐Feng Chen
5 shared publications
- Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy
- Ultrafast sub-bandgap photo-response in ErAs/GaAs at 1550 nm
- Electrical Transport Study in α-Sn Films Grown by Molecular Beam Epitaxy
- 1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure
- Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy
Hryhorii Stanchu
University of Arkansas at Fayetteville
5 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Shui-Qing Yu
University of Arkansas at Fayetteville
5 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Hong Lü
4 shared publications
- Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE
- Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy
- 1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure
- Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy
Ingmar Hartl
Deutsches Elektronen-Synchrotron DESY (DE)
4 shared publications
- Comparison of two low-noise CEO frequency stabilization methods for an all-PM Yb:fiber NALM oscillator
- Novel Photocathode Lasers for the Hard- and Soft-X-ray Free Electron Lasers EuXFEL and FLASH
- Sub-fs timing jitter of an 88 fs all-PM fiber integrated ultrafast Yb NALM oscillator
- Compact multi-pass spectral broadening schemes for XUV pulse generation
Subhashis Das
University of Arkansas at Fayetteville (US)
4 shared publications
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
4 shared publications
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Kedong Zhang
Nanjing University (CN)
3 shared publications
- Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE
- Ultrafast sub-bandgap photo-response in ErAs/GaAs at 1550 nm
- 1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure
Yuanfeng Ding
3 shared publications
- Ultrafast sub-bandgap photo-response in ErAs/GaAs at 1550 nm
- Electrical Transport Study in α-Sn Films Grown by Molecular Beam Epitaxy
- Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy
Jinshan Yao
Nanjing University (CN)
3 shared publications
- Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE
- Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy
- Electrical Transport Study in α-Sn Films Grown by Molecular Beam Epitaxy
Christoph M. Heyl
Deutsches Elektronen-Synchrotron DESY (DE)
3 shared publications
- Comparison of two low-noise CEO frequency stabilization methods for an all-PM Yb:fiber NALM oscillator
- Sub-fs timing jitter of an 88 fs all-PM fiber integrated ultrafast Yb NALM oscillator
- Compact multi-pass spectral broadening schemes for XUV pulse generation
Solomon Ojo
University of Arkansas at Fayetteville
3 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells
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