Kevin Chen
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Research Assistant Professor
Also affiliated: University of Nebraska–Lincoln (2017); Oak Ridge Associated Universities (2018); Oak Ridge National Laboratory (2018); Google (United States) (2018); Children's Hospital of Los Angeles (2021); Berkeley College (2002); ITRI International (2009–2012); Lawrence Berkeley National Laboratory (2005–2017); International Food Policy Research Institute (2022); University of Pittsburgh (2011–2023); Baylor College of Medicine (2019); Asian Development Bank Institute (2022); Joint Genome Institute (2004–2005); University of California, Irvine (2020–2022); Purdue University West Lafayette (2023); National Central University (2016); University of Michigan (2017); Harvard University Press (2014); Shantou University (2016); Centre de Recherches Pétrographiques et Géochimiques (2015); Nautilus (United States) (2022); Nanophase Technologies (United States) (2018); Délégation Centre-Est (2015); Louis Stokes Cleveland VA Medical Center (2017); Diversitech (United States) (2005); Neurological Research Institute (2019); Asian Development Bank (2022); Texas Children's Hospital (2019); Industrial Technology Research Institute (2004–2015); European Molecular Biology Laboratory (2005); University School (2014); National Institutes of Applied Research (2014); Arizona State University (2012); Case Western Reserve University (2014); Syracuse University (2019); Rice University (2019); Renesas Electronics (United States) (2013–2014); University of California, Berkeley (2001–2021); Stanford University (2022–2023)
Faculty Researcher
Research Areas
Biomedical Subjects
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Biography and Research Information
OverviewAI-generated summary
Kevin Chen's research focuses on the design, optimization, and packaging of high-voltage power modules, particularly those utilizing silicon carbide (SiC) and gallium nitride (GaN) semiconductor technologies. His work addresses challenges related to thermal management, system integration, and electromagnetic interference (EMI) mitigation in these advanced power electronic systems. Recent publications include studies on substrate-less power semiconductor packaging for recyclability, 10 kV SiC MOSFET power modules with optimized system interfaces, and a review of silicon carbide CMOS technology for harsh environments.
Chen has also investigated the design and optimization of gate driver integrated multichip 3-D GaN power modules and high-voltage SiC power modules for low parasitics and compatible system interfaces. His research extends to high-density power module packaging tutorials and EMI mitigation strategies using stacking DBC substrates. Further work includes the feasibility design of tight integration of low-inductance SiC power modules with microchannel coolers.
With an h-index of 32, 124 total publications, and over 13,000 citations, Chen is recognized as a highly cited researcher. He actively collaborates with other researchers at the University of Arkansas at Fayetteville, including H. Alan Mantooth, Xiaoling Li, Zhong Chen, and Sudharsan Chinnaiyan, with whom he shares multiple publications.
Metrics
- h-index: 32
- Publications: 124
- Citations: 13,172
Selected Publications
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Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
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Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
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Compact Busbar Design Strategy for a 100 kW, 300 kHz Dual Active Bridge Converter Topology (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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<i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025)
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Evaluation of Heat Spreading Technologies Within Double-Side-Cooled Power Modules (2025)
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Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability (2025)
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Multiobjective Optimization and Enhanced Design of an Ω-Shaped Current Sensor for WBG Devices (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates (2024)
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Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control (2024)
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Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices (2024)
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A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution (2024)
Collaboration Network
Top Collaborators
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution
- A review of silicon carbide CMOS technology for harsh environments
- A Tutorial on High-Density Power Module Packaging
- 3.3 kV Low-Inductance Full SiC Power Module
Showing 5 of 23 shared publications
- A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution
- High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- Feasibility Design of Tight Integration of Low Inductance SiC Power Module with Microchannel Cooler
- 3.3 kV Low-Inductance Full SiC Power Module
Showing 5 of 11 shared publications
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
Showing 5 of 8 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- Feasibility Design of Tight Integration of Low Inductance SiC Power Module with Microchannel Cooler
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
Showing 5 of 7 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- A Tutorial on High-Density Power Module Packaging
- Toward Direct Cooling in High Voltage Power Electronics: Dielectric Fluid Microchannel Embedded Source Bussing Terminal
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Showing 5 of 7 shared publications
- A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution
- High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface
- 3.3 kV Low-Inductance Full SiC Power Module
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
Showing 5 of 7 shared publications
- A review of silicon carbide CMOS technology for harsh environments
- A Tutorial on High-Density Power Module Packaging
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers
Showing 5 of 7 shared publications
- 3.3 kV Low-Inductance Full SiC Power Module
- A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices
- Multiobjective Optimization and Enhanced Design of an Ω-Shaped Current Sensor for WBG Devices
- A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled
- Heterotypic Current Transformer Design for Overcurrent Protection of SiC MOSFET
Showing 5 of 7 shared publications
- A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Multiobjective Optimization and Enhanced Design of an Ω-Shaped Current Sensor for WBG Devices
- A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled
- Heterotypic Current Transformer Design for Overcurrent Protection of SiC MOSFET
Showing 5 of 6 shared publications
- High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module
- Feasibility Design of Tight Integration of Low Inductance SiC Power Module with Microchannel Cooler
- 3.3 kV Low-Inductance Full SiC Power Module
- A 4.16kV/750kVA MV Power Conditioning System for Distribution System Applications
- A review of silicon carbide CMOS technology for harsh environments
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
- Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
- A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution
- 3.3 kV Low-Inductance Full SiC Power Module
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
- A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices
- Multiobjective Optimization and Enhanced Design of an Ω-Shaped Current Sensor for WBG Devices
- Heterotypic Current Transformer Design for Overcurrent Protection of SiC MOSFET
- A review of silicon carbide CMOS technology for harsh environments
- 3.3 kV Low-Inductance Full SiC Power Module
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
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