Sudip Acharya Source Confirmed

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Graduate Research Assistant

University of Arkansas at Fayetteville

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6 h-index 29 pubs 86 cited

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Biography and Research Information

OverviewAI-generated summary

Sudip Acharya's research focuses on the development and characterization of semiconductor materials for photonic integrated circuits. His work involves investigating group-IV materials, specifically Germanium-Tin (GeSn) alloys, and their integration onto silicon photonics platforms. Acharya has studied the growth mechanisms of Ge and GeSn on various substrates, including GaAs and Si, using molecular beam epitaxy. His publications explore aspects such as the role of dislocations in Sn diffusion, carrier collection efficiency in GeSn quantum wells, and the performance of electrically injected GeSn lasers operating at cryogenic temperatures. He has also examined Ge growth on Si substrates using aspect ratio trapping. Acharya collaborates with researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Shui-Qing Yu, Wei Du, and Solomon Ojo, with whom he shares multiple publications.

Metrics

  • h-index: 6
  • Publications: 29
  • Citations: 86

Selected Publications

  • High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025) DOI
  • Demonstration of AlGaAs/GeSn p-i-n diodes (2025) DOI
  • Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025) DOI
  • <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025) DOI
  • Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025) DOI
  • Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024) DOI
  • Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024) DOI
  • Electrically Injected GeSn Laser Operating up to 135 K (2024) DOI
  • Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024) DOI
  • Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023) DOI
  • Single crystal growth and characterization of topological semimetal ZrSnTe (2023) DOI
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023) DOI
  • Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022) DOI

Collaborators

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