Khandoker Asif Faruque Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

unknown

3 h-index 9 pubs 48 cited

Research Areas

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Nanoplatforms for cancer theranostics Metal and Thin Film Mechanics Sensor Interface Circuits High-Temperature Electronics

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OverviewAI-generated summary

Khandoker Asif Faruque's research focuses on the fabrication and refinement of semiconductor power modules and non-volatile memory devices. His work includes developing high-performance silicon carbide (SiC) power modules, contributing to advancements in power electronics. Faruque also investigates techniques for high-speed readout in high-density memristor crossbar memory systems, addressing challenges such as suppressed sneak-path currents. His scholarship metrics include an h-index of 1, with 4 total publications and 15 total citations. He has collaborated with Yuyang Wang at the University of Arkansas at Fayetteville on one shared publication. Faruque's recent publications indicate ongoing activity in the field of advanced semiconductor device fabrication and characterization.

Metrics

h-index: 3
Publications: 9
Citations: 48

Selected Publications

Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules (2025) DOI
Development, Integration, and Flight Testing of a Silicon Carbide Propulsion Drive for a Hybrid Electric Aerospace Application (2025) DOI
Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024) DOI
A review of silicon carbide CMOS technology for harsh environments (2024) DOI
A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024) DOI
Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023) DOI
Gate Driver Design in 180 nm SOI CMOS Process for Heterogeneous Integration Inside SiC Power Module (2023) DOI
An On-chip DC to 42.8 MHz Bandwidth Readout Interface for Hybrid Current Sensor (2023) DOI
High Gain Readout Interface Circuit for Hall Sensors for Low Power Applications (2022) DOI
A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module (2022) DOI
A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022) DOI
High-temperature LTCC assembly and design of SiC BJT-based negative charge pump (2021) DOI