C
Calbi Gunder Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
2 h-index
11 pubs
30 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Calbi Gunder is a faculty member at the University of Arkansas at Fayetteville whose research focuses on the epitaxial growth of semiconductor thin films, particularly germanium (Ge) and germanium-tin (GeSn) alloys. Gunder's work utilizes molecular beam epitaxy (MBE) to investigate the growth modes and crystallographic control of these materials on various substrates, including sapphire and gallium arsenide (GaAs). Recent publications detail the growth of single crystalline Ge thin films on c-plane sapphire and Ge/GeSn on GaAs (001), exploring methods for achieving high-quality films with controlled compositions and interfaces. Collaborations include extensive work with Emmanuel Wangila, Yuriy I. Mazur, Fernando Maia de Oliveira, and Mohammad Zamani‐Alavijeh, all from the University of Arkansas at Fayetteville, as evidenced by multiple shared publications. Gunder's scholarship metrics include an h-index of 2 with 11 total publications and 30 total citations.
Metrics
- h-index: 2
- Publications: 11
- Citations: 30
Selected Publications
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024)
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Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy (2023)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023)
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Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE) (2022)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 9 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
9 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 9 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
8 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 8 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Aida Sheibani
6 shared publications
In database
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Showing 5 of 6 shared publications
Hryhorii Stanchu
6 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Showing 5 of 6 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
5 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Serhii Kryvyi
University of Arkansas at Fayetteville
4 shared publications
In database
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
3 shared publications
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Samir K. Saha
University of Arkansas at Fayetteville (US)
3 shared publications
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy
Chen Li
University of Arkansas at Fayetteville
3 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Mourad Benamara
3 shared publications
In database
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Rahul Kumar
Oldham Council (GB)
2 shared publications
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy
Krista R. Khiangte
Indian Institute of Technology Gandhinagar (IN)
2 shared publications
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy
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