Z
Zhong Chen Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Associate Prof./Supervisor
faculty
104 h-index
1232 pubs
46,092 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Zhong Chen's research group at the University of Arkansas at Fayetteville focuses on semiconductor materials and devices, particularly silicon carbide (SiC) MOSFETs. Their work includes developing online junction temperature monitoring correction methods for SiC MOSFETs, considering various parasitic parameters. Chen is a Co-Principal Investigator on a significant National Science Foundation (NSF) Mid-Scale RI-1 grant, totaling $17,874,768, aimed at implementing a National Silicon Carbide Research Fabrication Facility.
Beyond semiconductor research, Chen's group has also published extensively on plant genomics and molecular biology. This includes comprehensive analyses of transcription factor gene families, such as R2R3-MYB and trehalose-related genes, in *Populus* species. Their work also delves into the characterization of mitochondrial genomes and the biosynthesis of triterpenoid saponins in *Sapindus mukorossi*. Additionally, the group investigates the complementarity of wind and solar power resources and their source-load matching characteristics.
Metrics
- h-index: 104
- Publications: 1232
- Citations: 46,092
Selected Publications
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Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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TCAD-Aided Investigation of Temperature-Dependent Behavior in 4H-SiC P-Channel MOSFETs Up to 500°C (2025)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025)
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Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025)
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Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025)
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A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024)
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Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability (2024)
Federal Grants 1 $17,874,768 total
NSF
Co-PI
Oct 2021 - Sep 2026
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
Collaboration Network
Top Collaborators
Pengyu Lai
University of Arkansas at Fayetteville
15 shared publications
In database
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- A review of silicon carbide CMOS technology for harsh environments
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
Showing 5 of 15 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
11 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A Tutorial on High-Density Power Module Packaging
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
Showing 5 of 11 shared publications
Peng Sun
North China Electric Power University (CN)
8 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
Showing 5 of 8 shared publications
Zhibin Zhao
North China Electric Power University (CN)
8 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
Showing 5 of 8 shared publications
Salahaldein Ahmed
University of Arkansas at Fayetteville
8 shared publications
In database
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Eliminating deadtime mismatch due to inserting storage capacitor of a GaN-based two-phase series-capacitor buck DC-DC converter
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
Showing 5 of 8 shared publications
Hui Wang
University of Arkansas at Fayetteville
7 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
- Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections
Showing 5 of 7 shared publications
Sudharsan Chinnaiyan
University of Arkansas at Fayetteville
6 shared publications
In database
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Showing 5 of 6 shared publications
Yumeng Cai
North China Electric Power University (CN)
5 shared publications
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Xuebao Li
North China Electric Power University (CN)
5 shared publications
- Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs
- Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Alan Mantooth
University of Arkansas at Fayetteville (US)
5 shared publications
- Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward
Yuxiang Chen
University of Arkansas at Fayetteville
4 shared publications
In database
- A Tutorial on High-Density Power Module Packaging
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
Xiang Cui
North China Electric Power University (CN)
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- LTCC Based Current Sensor for Silicon Carbide Power Module Integration
- Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
Lei Qi
North China Electric Power University (CN)
3 shared publications
- An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
- Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation
- Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Gregory J. Salamo
University of Arkansas at Fayetteville
3 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
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