Oluwatobi Olorunsola Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Post doctoral research

University of Arkansas at Fayetteville

postdoc

6 h-index 14 pubs 90 cited

Research Areas

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Photonic and Optical Devices Metal and Thin Film Mechanics

Links

ORCID Lab Website

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OverviewAI-generated summary

Oluwatobi Olorunsola's research focuses on the growth and characterization of semiconductor materials, particularly germanium-tin (GeSn) alloys, for optoelectronic applications. His work investigates the impact of growth conditions, such as low pressure and annealing temperatures, on the material properties of GeSn quantum wells and epilayers. Olorunsola has published studies on the optical and structural properties of GeSn/SiGeSn multiple quantum wells, as well as the carrier collection efficiency of GeSn single quantum wells, with implications for integrated photonics. He has also explored the role of dislocations on tin diffusion during annealing in GeSn layers and examined the thermal stability of gallium nitride-based magnetic field sensors. Olorunsola has a publication record of 14 papers and an h-index of 6, with 90 citations. He has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Yuriy I. Mazur, Fernando Maia de Oliveira, and Shui-Qing Yu.

Metrics

  • h-index: 6
  • Publications: 14
  • Citations: 90

Selected Publications

  • GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026) DOI
  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
  • Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024) DOI
  • Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023) DOI
  • Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023) DOI
  • Thermal stability study of gallium nitride based magnetic field sensor (2023) DOI
  • Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023) DOI
  • Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023) DOI
  • Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023) DOI
  • Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022) DOI
  • Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022) DOI
  • Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022) DOI
  • Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021) DOI

Collaborators

Researchers in the database who share publications

Hryhorii Stanchu University of Arkansas at Fayetteville 17 shared publications Yuriy I. Mazur University of Arkansas at Fayetteville 11 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 11 shared publications Shui-Qing Yu University of Arkansas at Fayetteville 10 shared publications Solomon Ojo University of Arkansas at Fayetteville 9 shared publications Wei Du University of Arkansas at Fayetteville 9 shared publications Mohammad Zamani‐Alavijeh University of Arkansas at Fayetteville 9 shared publications Dinesh Baral University of Arkansas at Fayetteville 8 shared publications

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