Yiyin Zhou
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Research Assistant
Also affiliated: Dartmouth College (2018); Nanjing Normal University (2000); Wilkes University (2014–2022); University of Alabama (2018); University of Massachusetts Amherst (2018); University of Massachusetts Boston (2014–2018); Arkema (United States) (2017); Institute of Physics (2002); ASM International (2019)
Graduate Student Researcher
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Yiyin Zhou's research focuses on the development and study of semiconductor lasers, particularly those based on Germanium-Tin (GeSn) alloys. Their work investigates the performance characteristics of electrically injected GeSn lasers, with a recent emphasis on achieving longer peak wavelengths, extending up to 2.7 μm. This research involves exploring different quantum well structures, such as SiGeSn/GeSn/SiGeSn single quantum wells, to enhance emission properties. Zhou also examines the impact of specific structural components, like the cap layer, on the overall performance of multiple quantum well lasers. This work has led to the demonstration of electrically injected GeSn lasers operating at various temperatures, including up to 110K and 135K.
In addition to laser research, Zhou is involved in additive manufacturing, specifically through a National Science Foundation (NSF) I-Corps grant focused on microheater array powder sintering technology. This project aims to develop advancements in powder sintering for additive manufacturing applications. Zhou has a publication record of 72 papers, with 1,873 citations, and an h-index of 18. Key collaborators include Wei Du, Solomon Ojo, Shui-Qing Yu, and Sylvester Amoah, all from the University of Arkansas at Fayetteville, with whom Zhou has co-authored multiple publications.
Metrics
- h-index: 18
- Publications: 72
- Citations: 1,911
Selected Publications
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Electrically Injected GeSn Laser Operating up to 135 K (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Silicon-based electrically injected GeSn lasers (2022)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Electrically Injected GeSn Laser on Si Operating up to 110K (2021)
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Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon (2020)
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Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers (2020)
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Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si (2020)
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Electrically injected GeSn lasers on Si operating up to 100 K (2020)
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Electrically injected GeSn lasers on Si operating up to 100 K (2020)
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019)
Federal Grants 1 $50,000 total
I-Corps: Microheater Array Powder Sintering Technology for Additive Manufacturing
Collaboration Network
Top Collaborators
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 8 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 7 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 7 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
Showing 5 of 6 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Electrically Injected GeSn Laser Operating up to 135 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Silicon-based electrically injected GeSn lasers
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
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