Joshua M. Grant

Researcher

University of Arkansas primary Southern Arkansas University

Also affiliated: Wilkes University (2022); San Fernando General Hospital (1966); Space Photonics (United States) (2020); ITT Technical Institute (1962)

Faculty Researcher

13 h-index 41 pubs 943 cited

Research Areas

Links

ORCID Research Group

OverviewAI-generated summary

Joshua M. Grant's research focuses on the development and study of group-IV semiconductor materials, particularly Germanium-Tin (GeSn) and Silicon-Germanium-Tin (SiGeSn) alloys, for photonic applications. His work investigates the growth of these materials using techniques such as ultra-high vacuum chemical vapor deposition (UHV-CVD) and aspect ratio trapping on silicon substrates. Grant has published research on electrically injected GeSn lasers emitting in the mid-infrared spectrum, achieving peak wavelengths up to 2.7 μm, and exploring dual-wavelength emission from SiGeSn mid-IR lasers. His studies also examine quantum well structures within these materials for integration into silicon photonics platforms, with a focus on enhancing carrier collection efficiency and understanding optical confinement factors. Grant collaborates extensively with researchers at the University of Arkansas at Fayetteville, including Wei Du, Solomon Ojo, Shui-Qing Yu, and Hryhorii Stanchu, with whom he shares multiple publications.

Metrics

h-index: 13
Publications: 41
Citations: 943

Selected Publications

In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)

Optical Materials Express 3 citations DOI OpenAlex
Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025)

ECS Journal of Solid State Science and Technology DOI OpenAlex
Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 3 citations DOI OpenAlex
In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2 citations DOI OpenAlex
Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)

Journal of Physics D Applied Physics 4 citations DOI OpenAlex
Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)

Scientific Reports 13 citations DOI OpenAlex
Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)

DOI OpenAlex
Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)

Optics Letters 2 citations DOI OpenAlex
Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)

ECS Meeting Abstracts DOI OpenAlex
Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)

Applied Physics Letters 11 citations DOI OpenAlex
Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)

Journal of Physics D Applied Physics 10 citations DOI OpenAlex
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)

Materials 19 citations DOI OpenAlex
Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)

Photonics Research 79 citations DOI OpenAlex
Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)

Optical Materials Express 17 citations DOI OpenAlex
Electrically injected GeSn lasers on Si operating up to 100 K (2020)

Optica 225 citations DOI OpenAlex