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Formerly Arkansas
Last published
2026
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OpenAlex · ORCID
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2026-10-08
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Paul Minor
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Formerly Arkansas Affiliated with Arkansas State University, University of Arkansas through 2024; recent publications list Ozark Integrated Circuits (United States).
5 h-index
11 pubs
207 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Paul Minor's research has explored advancements in semiconductor materials, specifically focusing on polarization-induced doping in graded AlGaN films on GaN substrates. His work in this area includes publications on creating pn-junctions without traditional dopants and investigating the reservoir effects of substrates in graded AlGaN layers. More recently, Minor has investigated applications of optical coherence tomography for cell monitoring and explored methods to improve the quality of InN thin films using strain gradient layers. His research also touches upon laboratory safety protocols, with a publication detailing the development and implementation of a hydrofluoric acid safety program in an academic setting.
Metrics
- h-index: 5
- Publications: 11
- Citations: 207
Selected Publications
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)] (2013)
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Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN (2012)
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Polarization doping: Reservoir effects of the substrate in AlGaN graded layers (2012)
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Polarization induced doping in graded AlGaN films (2011)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
5 shared publications
In database
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Polarization induced doping in graded AlGaN films
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Shibin Li
University of Electronic Science and Technology of China (CN)
4 shared publications
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Polarization induced doping in graded AlGaN films
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
Morgan E. Ware
University of Arkansas at Fayetteville
4 shared publications
In database
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Polarization induced doping in graded AlGaN films
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
Jiang Wu
University of Electronic Science and Technology of China (CN)
4 shared publications
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Polarization induced doping in graded AlGaN films
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
Zhiming Wang
University of Electronic Science and Technology of China (CN)
3 shared publications
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
Zhiming Wu
University of Electronic Science and Technology of China (CN)
3 shared publications
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
Yadong Jiang
University of Electronic Science and Technology of China (CN)
3 shared publications
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
Vasyl P. Kunets
University of Arkansas at Fayetteville (US)
2 shared publications
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Polarization induced doping in graded AlGaN films
Mike Hawkridge
University of Arkansas at Fayetteville (US)
2 shared publications
- Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
- Polarization induced doping in graded AlGaN films
Satish Shetty
University of Arkansas at Fayetteville
1 shared publication
In database
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
1 shared publication
In database
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Serhii Kryvyi
University of Arkansas at Fayetteville
1 shared publication
In database
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Chen Li
University of Arkansas at Fayetteville
1 shared publication
In database
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
1 shared publication
In database
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Nirosh M. Eldose
University of Arkansas at Fayetteville
1 shared publication
In database
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
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