Serhii B. Kryvyi

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Research Associate NANO 109

University of Arkansas

Also affiliated: National Academy of Sciences of Ukraine (2015–2020); Institute of Physics (2019–2025); V.E. Lashkaryov Institute of Semiconductor Physics (2015–2022); Polish Academy of Sciences (2019–2025)

10 h-index 51 pubs 284 cited

Research Areas

Links

ORCID Lab Website

OverviewAI-generated summary

Serhii B. Kryvyi's research focuses on the synthesis and characterization of nanomaterials, with recent work investigating composite nanoporous zeolite–carbon thin films for antireflection enhancement. His publications explore the properties of materials such as GaN/AlN superlattices grown on vicinal substrates, examining strain relaxation through comparative X-ray diffraction and atomic force microscopy studies. Kryvyi has also studied the dispersion properties of surface plasmons in porous gold films and the formation of nanoporous anodic alumina via anodization of aluminum films. Further research includes the self-aggregation of gold nanoparticles on functionalized surfaces and the investigation of large negative magnetoresistance in antiferromagnetic Gd2Se3. Kryvyi has a publication record of 54 papers, with 283 citations and an h-index of 10. He has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Fernando Maia de Oliveira (14 shared publications), Hryhorii Stanchu (12 shared publications), Gregory J. Salamo (10 shared publications), and Yuriy I. Mazur (9 shared publications).

Metrics

h-index: 10
Publications: 51
Citations: 284

Positions

Research Associate NANO 109 publications 2023–2026

University of Arkansas at Fayetteville Listing

Selected Publications

Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)

ACS Applied Materials & Interfaces DOI OpenAlex
From Pd to Pd/Au and Pd/Ni/Au: Structural and interfacial characterization of ohmic contacts to p-GaN (2026)

Materials Science in Semiconductor Processing DOI OpenAlex
Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)

Crystal Growth & Design DOI OpenAlex
Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)

Applied Physics Letters 2 citations DOI OpenAlex
Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)

Semiconductor Science and Technology DOI OpenAlex
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)

arXiv (Cornell University) OpenAlex
Effects of short- and long-range disorder in the photoluminescence of GaAs 1 − x Sb x / GaAs quantum wells (2025)

Physical review. B./Physical review. B 1 citation DOI OpenAlex
X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)

Journal of Applied Physics DOI OpenAlex
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)

Crystal Growth & Design 7 citations DOI OpenAlex
MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)

Journal of Physics D Applied Physics 10 citations DOI OpenAlex
Large negative magnetoresistance in antiferromagnetic G d 2 S e 3 (2025)

Physical review. B./Physical review. B 12 citations DOI OpenAlex
Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode (2024)

Materials 2 citations DOI OpenAlex
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)

Crystals 3 citations DOI OpenAlex
Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)

Crystal Growth & Design 2 citations DOI OpenAlex
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)

Nanomaterials 2 citations DOI OpenAlex