S
Serhii Kryvyi Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Research Associate NANO 109
postdoc
9 h-index
53 pubs
250 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Serhii Kryvyi's research focuses on the structural and electronic properties of semiconductor materials, particularly III-nitrides and oxides. He has investigated spontaneous polarization models and induced electric fields in III-nitride multi-quantum wells. His work also includes the growth and characterization of materials such as polar and non-polar Zn1−xMgxO:Sb, ZnO/MgO superlattices, and Ge by aspect ratio trapping on Si substrates using molecular beam epitaxy (MBE). Kryvyi has explored the incorporation and segregation of elements like Bi in core-shell nanowires, and the reconstruction of three-dimensional strain fields in asymmetrical hetero-nanowires. Additionally, his research extends to palladium-based contacts on p-GaN for laser diode applications and the study of large negative magnetoresistance in antiferromagnetic Gd2Se3. Kryvyi has published 48 papers with 241 citations and an h-index of 9, and collaborates extensively with researchers at the University of Arkansas.
Metrics
- h-index: 9
- Publications: 53
- Citations: 250
Selected Publications
-
Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
-
Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
-
Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
-
X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
-
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
-
MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
-
Large negative magnetoresistance in antiferromagnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">G</mml:mi><mml:msub><mml:mi mathvariant="normal">d</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> (2025)
-
Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode (2024)
-
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
-
Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
-
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
-
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
-
Effects of ion implantation with arsenic and boron in germanium-tin layers (2024)
-
Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
-
Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes (2023)
Collaboration Network
Top Collaborators
Yuriy I. Mazur
University of Arkansas at Fayetteville
12 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 12 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
10 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate
Showing 5 of 10 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
10 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 10 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
10 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 10 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
10 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 10 shared publications
A. Wierzbicka
6 shared publications
- Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells
- Structural analysis of the ZnO/MgO superlattices on a-polar ZnO substrates grown by MBE
- The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures
- Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate
- Comparison of Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells – Experimental and Ab Initio Study
Showing 5 of 6 shared publications
S. Kret
Institute of Physics (PL)
6 shared publications
- Reconstruction of three-dimensional strain field in an asymmetrical curved core–shell hetero-nanowire
- Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires
- Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction
- Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode
- Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires
Showing 5 of 6 shared publications
Wei Du
University of Arkansas at Fayetteville
6 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
Showing 5 of 6 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Showing 5 of 6 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
5 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
Dinesh Baral
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
Paweł Strąk
4 shared publications
- Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells
- The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures
- Comparison of Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells – Experimental and Ab Initio Study
- Comparative Analysis of the Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells
Kamil Koroński
4 shared publications
- Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells
- The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures
- Comparison of Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells – Experimental and Ab Initio Study
- Comparative Analysis of the Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells
E. Monroy
4 shared publications
- Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells
- The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures
- Comparison of Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells – Experimental and Ab Initio Study
- Comparative Analysis of the Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells
Agata Kamińska
4 shared publications
- Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells
- The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures
- Comparison of Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells – Experimental and Ab Initio Study
- Comparative Analysis of the Emission Properties of Polar Gan/Aln and Algan/Aln Multi-Quantum Wells
Similar Researchers
Based on overlapping research topics
Satish Shetty
University of Arkansas at Fayetteville
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Advancements in Semiconductor Devices and Circuit Design
Calbi Gunder
University of Arkansas at Fayetteville
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Advancements in Semiconductor Devices and Circuit Design
Cameron Mondl
University of Arkansas at Fayetteville
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Advancements in Semiconductor Devices and Circuit Design
Saroj Majakoti
University of Arkansas at Fayetteville
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Advancements in Semiconductor Devices and Circuit Design
Nirosh M. Eldose
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
GaN-based semiconductor devices and materials
J. P. Cowger
University of Arkansas at Fayetteville
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Advancements in Semiconductor Devices and Circuit Design