Mourad Benamara
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Distinguished Professor Fayetteville
Also affiliated: Centre National de la Recherche Scientifique (1995–1997); Lawrence Berkeley National Laboratory (1998–2002); National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); Friedrich-Alexander-Universität Erlangen-Nürnberg (2003–2005); Observatoire de Paris (1989); Center for NanoScience (2018–2026); Center for Nanoscale Science and Technology (2012–2017); V.E. Lashkaryov Institute of Semiconductor Physics (2017); Nanchang Institute of Science & Technology (2018–2026); Centre d’Élaboration de Matériaux et d’Études Structurales (1995–1997); Material Sciences (United States) (2013); Motorola (France) (2002); Carnegie Mellon University (2003–2006); University of Tulsa (2016); Technical University of Denmark (1998–1999)
Faculty Researcher
Research Areas
Biomedical Subjects
Biography and Research Information
OverviewAI-generated summary
Mourad Benamara's research program focuses on the synthesis and characterization of novel nanomaterials for applications in areas such as energy storage and catalysis. His work involves techniques like molecular layer deposition and atomic layer deposition to create materials with tailored properties. Recent publications include studies on molecular layer deposition of crosslinked poly(silicone) for lithium metal anodes, Pt(II)-decorated covalent organic frameworks for photocatalytic reactions, and nanoscale lithium sulfide coating via atomic layer deposition for high-performance LiNi0.8Mn0.1Co0.1O2 cathodes.
Further research areas include the investigation of imine covalent organic frameworks for photocatalytic hydrogen evolution and catalyst-enabled linkage reduction. Benamara also studies the tuning of surface plasmon resonance in gold dumbbell nanorods and quantitative correlation of dislocation generation, strain relief, and Sn outdiffusion in thermally annealed GeSn epilayers. His group also explores polydopamine and SiO2 nanoparticle underlayers for improving DLC coating adhesion and durability.
Benamara is a Distinguished Professor at the University of Arkansas at Fayetteville. He has an h-index of 35 and has authored over 228 publications with more than 5,777 citations. He collaborates extensively with researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Fernando Maia de Oliveira, Gregory J. Salamo, and Shui-Qing Yu.
Metrics
- h-index: 36
- Publications: 230
- Citations: 5,822
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Phase-Coherent Transport in Two-Dimensional Tellurium Flakes (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Leveraging oxygen mobility with zirconia in low-temperature plasma for enhanced methane reforming to syngas (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition (2025)
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Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet Cu<i><sub>x</sub></i>Ni<sub>2(1‐</sub><i><sub>x</sub></i><sub>)</sub>Cr<i><sub>x</sub></i>P<sub>2</sub>S<sub>6</sub> (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
Collaboration Network
Top Collaborators
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 13 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 11 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 11 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 9 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 9 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Showing 5 of 9 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%
Showing 5 of 7 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%
Showing 5 of 7 shared publications
- Tuning Exchange Coupling in NiO-Based Bimagnetic Heterostructured Nanocrystals
- Defects and Surface Chemistry of Novel PH-Tunable NiO-Mn3O4 ± MnxNi1-xO Heterostructured Nanocrystals as Determined Using X-ray Photoemission Spectroscopy
- On the synthesis and characterization of bimagnetic CoO/NiFe2O4 heterostructured nanoparticles
- On the Structural and Molecular Properties of PEO and PEO-PPG Functionalized Chitosan Nanoparticles for Drug Delivery
- On the Structural and Molecular Properties of PEO and PEO-PPG Functionalized Chitosan Nanoparticles for Drug Delivery
Showing 5 of 6 shared publications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
Showing 5 of 6 shared publications
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy
- Pt(II)-Decorated Covalent Organic Framework for Photocatalytic Difluoroalkylation and Oxidative Cyclization Reactions
- Probe metal binding mode of imine covalent organic frameworks: cycloiridation for (photo)catalytic hydrogen evolution from formate
- Catalyst-Enabled <i>In Situ</i> Linkage Reduction in Imine Covalent Organic Frameworks
- Fluoride etched Ni-based electrodes as economic oxygen evolution electrocatalysts
- Ambient-pressure ozone treatment enables tuning of oxygen vacancy concentration in the La<sub>1−<i>x</i></sub>Sr<sub><i>x</i></sub>FeO<sub>3−<i>δ</i></sub> (0 ≤ <i>x</i> ≤ 1) perovskite oxides
- Real-Time Imaging of Laser-Induced Nanowelding of Silver Nanoparticles in Solution
- Real-time imaging of laser-induced nanowelding of silver nanoparticles in solution
- Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
- Pt(II)-Decorated Covalent Organic Framework for Photocatalytic Difluoroalkylation and Oxidative Cyclization Reactions
- Probe metal binding mode of imine covalent organic frameworks: cycloiridation for (photo)catalytic hydrogen evolution from formate
- Catalyst-Enabled <i>In Situ</i> Linkage Reduction in Imine Covalent Organic Frameworks
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