Perry C. Grant
Researcher
Also affiliated: New Mexico State University (2021); Dartmouth College (2018); United States Air Force Research Laboratory (2020–2026); Lawrence Berkeley National Laboratory (2010); Wilkes University (2018); University of New Mexico (2020); University of Alabama (2018); University of Massachusetts Amherst (2018); Kirtland Air Force Base (2023–2026); University of Massachusetts Boston (2018); Sandia National Laboratories (2021); Arkema (United States) (2017); The Ark (2026); Fayetteville Public Library (2017); Applied Technology Associates (United States) (2020–2021); Space Photonics (United States) (2020); Arizona State University (2020–2021); The University of Texas at Austin (2020)
Faculty Researcher
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Biography and Research Information
OverviewAI-generated summary
Perry C. Grant's research focuses on the development and characterization of semiconductor materials for infrared sensing applications. His work investigates the fundamental properties of semiconductor heterostructures, including mid-wave infrared (MWIR) InGaAs/InAsSb superlattices and quinary GaInAsSbBi grown by molecular beam epitaxy. Grant has explored the utility of Shockley–Read–Hall analysis for extracting defect properties from semiconductor minority carrier lifetime data and has studied Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum wells. His recent publications also include the demonstration of a 4.32 μm cutoff InAsSbBi photodetector, a lattice-matched random alloy III–V solution for MWIR sensing, and the development of monolithic Germanium–Tin on Si avalanche photodiodes for infrared detection. Grant has co-authored 61 publications, with an h-index of 16 and over 1,151 citations. He has a history of collaboration with researchers at the University of Arkansas at Fayetteville, including Wei Du, Sylvester Amoah, Justin Rudie, and Shui-Qing Yu.
Metrics
- h-index: 16
- Publications: 70
- Citations: 1,193
Selected Publications
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging (2019)
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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019)
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging (2019)
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Silicon-based GeSn mid-infrared lasers (Conference Presentation) (2019)
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Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications (2019)
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All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K (2018)
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Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications (2018)
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Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement (2018)
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High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging (2018)
Collaboration Network
Top Collaborators
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
- Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
- Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
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