Ram Joshi
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Assistant
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Ram Joshi's research investigates the growth and characterization of Group IV semiconductor alloys, specifically GeSn, for potential applications in topological materials. His work involves utilizing advanced techniques such as Scanning Tunneling Microscopy (STM) and Angle-Resolved Photoemission Spectroscopy (ARPES) to assess the quality and atomic ordering of these materials. Joshi has published on the growth of Ge-Sn digital alloys and the characterization of GeSn grown on Ge(001). His research network includes collaborators from the University of Arkansas at Fayetteville, such as Nirosh M. Eldose, Hryhorii Stanchu, H. Nakamura, and Diandian Zhang, with whom he has co-authored publications.
Metrics
- h-index: 1
- Publications: 2
- Citations: 1
Positions
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Graduate Assistant 2019–presentUniversity of Arkansas at Fayetteville Physics ORCID
Selected Publications
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials (2025)
Collaboration Network
Top Collaborators
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials
- Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials
- Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials
- Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials
- Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials
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