Sylvester Amoha
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OverviewAI-generated summary
Sylvester Amoha's research focuses on the synthesis and characterization of semiconductor materials, particularly pseudomorphic GeSn alloys. His work has involved investigating the low-pressure growth of these materials, with a recent publication detailing a 16.7% Sn incorporation rate. Amoha collaborates with researchers at the University of Arkansas at Fayetteville, including Nirosh M. Eldose, Joshua M. Grant, Solomon Ojo, and Abbas Sabbar, with whom he has co-authored publications. His recent activity indicates ongoing engagement in this field of materials science.
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- Publications: 1
Selected Publications
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
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