Match tier
Listed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
A
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Aida Sheibani's research focuses on semiconductor materials, particularly the epitaxial growth of germanium (Ge) and germanium-tin (GeSn) thin films on various substrates, including sapphire and gallium arsenide (GaAs). Her work involves molecular beam epitaxy (MBE) techniques to achieve high-quality single-step growth and control epitaxial growth modes. She investigates the effects of polar distortion on thermoelectric properties and explores interface-driven growth mechanisms for two-dimensional materials like gallium selenide (GaSe) on three-dimensional GaAs substrates. Sheibani has published work on the growth of GaAs on c-plane sapphire and the algorithmic determination of graded compositions for GeSn on GaAs. Her research network includes collaborators such as Serhii Kryvyi, Fernando Maia de Oliveira, Calbi Gunder, and Yuriy I. Mazur, with whom she has co-authored multiple publications.
Metrics
- h-index: 2
- Publications: 12
- Citations: 8
Positions
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PhD candidate 2021–presentUniversity of Arkansas at Fayetteville Physics ORCID
Selected Publications
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Deformation-Potential-Driven Photostriction in Layered Ferroelectrics (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)arXiv (Cornell University) OpenAlex
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023)
Collaboration Network
Top Collaborators
Calbi Gunder
United States Air Force Research Laboratory
6 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Showing 5 of 6 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
6 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Showing 5 of 6 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
5 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Serhii Kryvyi
University of Arkansas at Fayetteville
5 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Emmanuel Wangila
University of Arkansas at Fayetteville
4 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Gregory J. Salamo
University of Arkansas at Fayetteville
4 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
4 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Charles Paillard
Université Paris-Saclay
3 shared publications
In database
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
- Deformation-Potential-Driven Photostriction in Layered Ferroelectrics
Paul C. Attwood
2 shared publications
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Hryhorii Stanchu
University of Arkansas at Fayetteville
2 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Mourad Benamara
University of Arkansas at Fayetteville
2 shared publications
In database
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Mohammad Zamani Alavijeh
University of Arkansas at Fayetteville
1 shared publication
In database
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
1 shared publication
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Mohammad Zamani
1 shared publication
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
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