Match tier
Confirmed
Presence
Formerly Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
S
Subhashis Das
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Assistant Professor
Also affiliated: University of Calcutta (2014); Variable Energy Cyclotron Centre (1989–2013); Techno India University (2021); Bhabha Atomic Research Centre (1996); Indian Institute of Technology Kharagpur (2007–2018); National Institute Of Technology Silchar (2019); Institute of Chemical Technology (2023); Jadavpur University (2012); Indian Oil Corporation (India) (2017); Indian Institute of Technology Mandi (2017–2024)
Formerly Arkansas Affiliated with University of Arkansas through 2024; recent publications list SR University.
17 h-index
61 pubs
845 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Subhashis Das investigates materials science and nanotechnology, with a particular focus on nanoparticles and their applications. His research explores the dynamics of solvation and rotational relaxation of coumarin 480 within reverse micelles, including those containing silver nanoparticles. Das has also studied the synthesis of silver nanoparticles within nonaqueous reverse micelles and the impact of these nanoparticles on micellar aggregates. His work extends to the characterization of materials, such as the influence of annealing temperature on the band-alignment of Ga2O3/Si heterointerfaces and the structural insights into clarified oil using NMR spectroscopy.
Das's scholarship includes 61 publications and 845 citations, with an h-index of 17. He has collaborated with several researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur and Nirosh M. Eldose, with whom he shares multiple publications. His research activities are marked by recent publications and ongoing engagement in the field.
Metrics
- h-index: 17
- Publications: 61
- Citations: 845
Positions
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Assistant Professor 2025–presentSR University Electronics and Communication Engineering ORCID
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Research Associate 2021–2025University of Arkansas Institute for Nanoscience and Engineering ORCID
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Assistant Professor 2020Brainware University Electronics and Communication Engineering ORCID
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Senior Technical Consultant 2019–2020Accurion Scientific Instruments Pvt. Ltd. Posted at IIT Mandi ORCID
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Post Doctoral Fellow 2017–2019Indian Institute of Technology Mandi School of Computing and Electrical Engineering ORCID
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Research Scholar 2012–2016Indian Institute of Technology Kharagpur Advanced Technology Develop Centre ORCID
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Part-time Lecturer 2009–2010Raja N. L. Khan Womens College Physics ORCID
Selected Publications
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures (2023)
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Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023)
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Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors (2022)
Collaboration Network
Top Collaborators
Nirosh M. Eldose
University of Arkansas at Fayetteville
5 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Yuriy I. Mazur
University of Arkansas at Fayetteville
5 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Gregory J. Salamo
University of Arkansas at Fayetteville
5 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Hryhorii Stanchu
University of Arkansas at Fayetteville
4 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Chen Li
University of Arkansas at Fayetteville
4 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Shui-Qing Yu
University of Arkansas at Fayetteville
3 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Emmanuel Wangila
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
2 shared publications
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Calbi Gunder
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Samir K. Saha
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Satish Shetty
University of Arkansas at Fayetteville
2 shared publications
In database
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Mourad Benamara
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Robin Khosla
National Institute Of Technology Silchar (IN)
1 shared publication
- Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors
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