Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-06
D
Diandian Zhang
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Post Doctoral Fellow
Also affiliated: Jiangnan University (2021–2026); Xidian University (2022); Chinese Academy of Sciences (2022–2023); University of Cambridge (2024–2025); State Key Laboratory on Integrated Optoelectronics (2022–2023); Institute of Semiconductors (2022–2023); Beijing Academy of Quantum Information Sciences (2022); PLA Army Engineering University (2017); University of Chinese Academy of Sciences (2022–2023); People's Liberation Army Air Force (2018–2020); Zhejiang University (2026)
10 h-index
41 pubs
340 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Diandian Zhang's research investigates advanced materials for energy and sensing applications. His work includes the development of bio-inspired core-shell structural aerogels designed for efficient solar thermoelectricity and freshwater cogeneration. Zhang also focuses on semiconductor materials, specifically studying Sn content gradient GeSn with strain control for high-performance mid-infrared photodetectors, as well as developing high-speed broadband photodetectors utilizing hybrid perovskite nanocrystals and germanium. Other research areas include lubricant-grafted omniphobic surfaces with anti-biofouling and drag-reduction properties, and the optimization of reinforced concrete structures under blast loads, considering embodied energy and cost. Zhang's scholarly contributions are reflected in an h-index of 10 and over 335 citations across his 41 publications. He collaborates extensively with researchers at the University of Arkansas at Fayetteville, including Nirosh M. Eldose, Wei Du, Hryhorii Stanchu, and Mourad Benamara.
Metrics
- h-index: 10
- Publications: 41
- Citations: 340
Positions
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University of Arkansas at Fayetteville publications 2024–2026ORCID
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Post Doctoral Fellow publications 2024–2026University of Arkansas at Fayetteville Institution web page
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024)
Collaboration Network
Top Collaborators
Nirosh M. Eldose
University of Arkansas at Fayetteville
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
Dinesh Baral
University of Arkansas at Fayetteville
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
Wei Du
University of Arkansas at Fayetteville
8 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
Showing 5 of 8 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Showing 5 of 6 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Showing 5 of 6 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 6 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Mourad Benamara
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
3 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
3 shared publications
In database
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Richard Soref
University of Massachusetts Boston (US)
2 shared publications
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
M. Benamara
University of Arkansas at Fayetteville
2 shared publications
In database
- Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%
- Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy
Hryhorii Stanchu
University of Arkansas at Fayetteville
2 shared publications
In database
- Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Fernando M. de Oliveira
University of Arkansas at Fayetteville
1 shared publication
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
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