Subhashis Das
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Assistant Professor
Also affiliated: University of Calcutta (2014); Variable Energy Cyclotron Centre (1989–2013); Techno India University (2021); Bhabha Atomic Research Centre (1996); Indian Institute of Technology Kharagpur (2007–2018); National Institute Of Technology Silchar (2019); Institute of Chemical Technology (2023); Jadavpur University (2012); Indian Oil Corporation (India) (2017); Indian Institute of Technology Mandi (2017–2024)
Formerly Arkansas Affiliated with University of Arkansas through 2024.
Faculty Researcher
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Subhashis Das is an Assistant Professor at the University of Arkansas at Fayetteville. His research focuses on the development and characterization of advanced materials and semiconductor devices. Das has published work on topics including thin-film growth techniques such as molecular beam epitaxy (MBE) and mist-based chemical vapor deposition. His publications investigate the properties of materials like hafnium disulfide, zirconium oxide, germanium, indium nitride, and gallium oxide, exploring their application in transistors and gas sensors.
His work also includes the study of catalysts for methane reforming and the incorporation of elements like tin into semiconductor epilayers. Das's research network includes collaborators such as Yuriy I. Mazur, Nirosh M. Eldose, Fernando Maia de Oliveira, and Hryhorii Stanchu, with whom he has co-authored multiple publications. He has an h-index of 17 and has authored 61 publications with a total of 843 citations.
Metrics
- h-index: 17
- Publications: 61
- Citations: 845
Selected Publications
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
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Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors (2022)
Collaboration Network
Top Collaborators
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC
- Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors
- Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors
- Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
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