Sylvester Amoah

This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.

Researcher

University of Arkansas

Also affiliated: Western Illinois University (2017); Lenoir–Rhyne University (2017); North Carolina State University (2017)

Faculty Researcher

8 h-index 28 pubs 438 cited

Research Areas

Links

ORCID Lab Website

OverviewAI-generated summary

Sylvester Amoah's research focuses on the development and investigation of semiconductor materials, particularly germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn) alloys, for optoelectronic applications. His work involves studying the growth of these materials using techniques such as molecular beam epitaxy (MBE) and exploring their properties for integrated photonics platforms. Recent publications detail the creation of electrically injected GeSn lasers emitting at wavelengths up to 2.7 μm, the development of monolithic GeSn on Si avalanche photodiodes for infrared detection, and the growth of pseudomorphic GeSn layers with significant tin composition. Amoah also investigates the fundamental aspects of these materials, including the role of dislocations on tin diffusion during annealing processes and the characteristics of SiGeSn/GeSn/SiGeSn quantum wells for enhanced emission. He collaborates with several faculty members at the University of Arkansas at Fayetteville, including Wei Du, Shui-Qing Yu, Sudip Acharya, and Solomon Ojo, with whom he has co-authored numerous publications.

Metrics

h-index: 8
Publications: 28
Citations: 438

Selected Publications

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)

Applied Physics Letters DOI OpenAlex
Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)

DOI OpenAlex
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)

IEEE Journal of Selected Topics in Quantum Electronics 8 citations DOI OpenAlex
Electrically Injected GeSn Laser Operating up to 135 K (2024)

1 citation DOI OpenAlex
Effects of ion implantation with arsenic and boron in germanium-tin layers (2024)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2 citations DOI OpenAlex
Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 7 citations DOI OpenAlex
Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)

DOI OpenAlex
Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)

Journal of Crystal Growth 4 citations DOI OpenAlex
Single crystalline Ge thin film growth on c -plane sapphire substrates by molecular beam epitaxy (MBE) (2022)

CrystEngComm 15 citations DOI OpenAlex
Silicon-based electrically injected GeSn lasers (2022)

6 citations DOI OpenAlex
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)

Materials 19 citations DOI OpenAlex
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)

Nanotechnology 6 citations DOI OpenAlex
Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)

Photonics Research 79 citations DOI OpenAlex
Electrically Injected GeSn Laser on Si Operating up to 110K (2021)

Conference on Lasers and Electro-Optics 2 citations DOI OpenAlex
Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)

Optical Materials Express 17 citations DOI OpenAlex