Sylvester Amoah

This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.

Role not yet determined Is this you? Add your title

University of Arkansas

Also affiliated: Western Illinois University (2017); Lenoir–Rhyne University (2017); North Carolina State University (2017)

8 h-index 28 pubs 439 cited

Research Areas

Links

ORCID Lab Website

OverviewAI-generated summary

Sylvester Amoah's research focuses on the development and characterization of semiconductor materials, particularly germanium-tin (GeSn) alloys, for applications in integrated photonics and infrared detection. His work includes the growth of pseudomorphic GeSn at low pressures and low temperatures using plasma-enhanced chemical vapor deposition, achieving significant tin compositions. He has investigated electrically injected GeSn lasers operating at cryogenic temperatures and emitting at wavelengths up to 2.7 μm. Amoah has also explored the growth of single crystalline germanium thin films via molecular beam epitaxy and the development of monolithic germanium-tin on silicon avalanche photodiodes for infrared detection. His research is supported by collaborations with Shui-Qing Yu, Wei Du, Sudip Acharya, and Solomon Ojo at the University of Arkansas at Fayetteville, with whom he shares multiple publications. Amoah's scholarly output includes 28 publications with 442 citations and an h-index of 8.

Metrics

h-index: 8
Publications: 28
Citations: 439

Selected Publications

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)

Applied Physics Letters 1 citation DOI OpenAlex
Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)

DOI OpenAlex
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)

IEEE Journal of Selected Topics in Quantum Electronics 8 citations DOI OpenAlex
Electrically Injected GeSn Laser Operating up to 135 K (2024)

1 citation DOI OpenAlex
Effects of ion implantation with arsenic and boron in germanium-tin layers (2024)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2 citations DOI OpenAlex
Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 7 citations DOI OpenAlex
Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)

DOI OpenAlex
Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)

Journal of Crystal Growth 4 citations DOI OpenAlex
Single crystalline Ge thin film growth on c -plane sapphire substrates by molecular beam epitaxy (MBE) (2022)

CrystEngComm 15 citations DOI OpenAlex
Silicon-based electrically injected GeSn lasers (2022)

6 citations DOI OpenAlex
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)

Materials 19 citations DOI OpenAlex
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)

Nanotechnology 6 citations DOI OpenAlex
Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)

Photonics Research 81 citations DOI OpenAlex
Electrically Injected GeSn Laser on Si Operating up to 110K (2021)

Conference on Lasers and Electro-Optics 2 citations DOI OpenAlex
Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)

Optical Materials Express 17 citations DOI OpenAlex