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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-09
S
Shui-Qing Yu
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
High Impact
Professor
Also affiliated: Dartmouth College (2018); Shanghai University (2011); Wilkes University (2014–2022); University of Alabama (2018); Anhui University of Science and Technology (2014); Peking University (2005); University of Massachusetts Boston (2014–2018); Photonics (United States) (2002–2007); Sandia National Laboratories (2025); Center for Integrated Nanotechnologies (2025); Arizona State University (2001–2012)
38 h-index
346 pubs
5,471 cited
Research Areas
Biomedical Subjects
Biography and Research Information
OverviewAI-generated summary
Shui-Qing Yu's research focuses on the development and characterization of novel semiconductor materials, particularly germanium-tin (GeSn) alloys grown on silicon substrates. His work aims to enable new functionalities in optoelectronic devices, such as lasers and photodetectors that operate in the mid-infrared spectrum. Yu has investigated methods to improve the quality of GeSn alloys, including techniques for strain relaxation and the control of spontaneous composition gradients to reduce defects. His publications detail the performance of GeSn-based devices, exploring their potential for applications in imaging and telecommunications.
His research has been supported by federal funding, including an EAGER grant from the National Science Foundation (NSF) for exploring new semiconductor materials for infrared detection and a Co-PI role on an IUCRC grant focused on high-frequency electronics for communication systems. Yu leads a research group at the University of Arkansas at Fayetteville and collaborates with several colleagues, including Gregory J. Salamo, Wei Du, Hryhorii Stanchu, and Yuriy I. Mazur, with whom he has co-authored numerous publications. Yu is recognized as a highly cited researcher, with a publication record of 341 papers and over 5,400 citations.
Metrics
- h-index: 38
- Publications: 346
- Citations: 5,471
Positions
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Professor 2023–presentUniversity of Arkansas Department of Electrical Engineering and Computer Science ORCID
Selected Publications
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Bias-Polarity-Controlled VIS–SWIR Dual-Mode Photodetection in a Grafted GaAs/MQW-GeSn/Ge Heterostructure (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures (2026)arXiv (Cornell University) OpenAlex
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Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures (2026)
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SiGeSn-on-insulator platform enabled by a novel layer-transfer process technology (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Growth of Ge-Sn Digital Alloys toward Group IV Topological Materials (2025)
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Identification of short-range ordering motifs in semiconductors (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Design of Ge/GeSiSn Quantum Cascade Laser and Detector (2025)
Federal Grants 2 $1,548,068 total
NSF
Co-PI
Jul 2021 - Aug 2027
NSF
PI
Jun 2024 - May 2027
EAGER: IMPRESS-U: Novel Approach to New Semiconductor (Si)GeSn for Infrared Detection
Collaboration Network
Top Collaborators
Wei Du
University of Arkansas at Fayetteville
88 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Showing 5 of 88 shared publications
Greg Sun
56 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Showing 5 of 56 shared publications
John Tolle
ASM International (US)
56 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Showing 5 of 56 shared publications
Joe Margetis
Arizona Research Center (US)
55 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Showing 5 of 55 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
54 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
- Toward Single Atom Chains with Exfoliated Tellurium
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains
Showing 5 of 54 shared publications
Richard Soref
University of Massachusetts Boston (US)
52 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Showing 5 of 52 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
50 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 50 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
50 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 50 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
49 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 49 shared publications
Baohua Li
43 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
Showing 5 of 43 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
35 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 35 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
33 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- An optically pumped 2.5 <i>μ</i>m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 33 shared publications
Yuriy I. Mazur
Center for NanoScience
33 shared publications
In database
- Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures
Showing 5 of 33 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
32 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Showing 5 of 32 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
31 shared publications
In database
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films
Showing 5 of 31 shared publications
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