Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
Y
Yuriy I. Mazur
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
High Impact
Professor
Also affiliated: California NanoSystems Institute (2014); University of California, Los Angeles (2014); Center for NanoScience (2019–2026); Yale University (2014); Center for Nanoscale Science and Technology (2010–2022); The Ark (2010); Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy (2002)
Faculty Researcher
27 h-index
198 pubs
3,133 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Yuriy I. Mazur's research focuses on the study of semiconductor materials and nanostructures, particularly quantum dots, for applications in optoelectronic devices. His work investigates the fundamental properties of materials such as InAs, InGaAs, and GeSn, exploring how factors like strain, temperature, and crystal structure influence their performance. Recent publications include studies on the efficiency of InAs nanostructures in solar cells, the development of mid-infrared quantum cascade detectors operating at high temperatures, and the characteristics of photoluminescence from surface quantum dots.
His research also extends to the growth and characterization of novel semiconductor alloys, including GeSn epilayers on GaAs substrates. Mazur's publications detail methods for modeling Raman shifts in materials with significant lattice mismatch and examine the properties of AlN/GaN heterostructures for Hall effect sensors. He has published extensively, with a significant number of collaborations with Gregory J. Salamo, Fernando Maia de Oliveira, Morgan E. Ware, and Hryhorii Stanchu, all based at the University of Arkansas at Fayetteville.
Metrics
- h-index: 27
- Publications: 198
- Citations: 3,133
Selected Publications
-
Engineering Exciton <i>g</i> ‐Factors With Light in Type‐II Heterostructures (2026)
-
Hopping conduction in GeSiSn alloys: Impact of structural disorder on electrical transport (2026)
-
STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
-
Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
-
Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
-
Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
-
Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
-
Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
-
Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure (2025)
-
Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
-
X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
-
Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
-
Modification of the Morphology and Light-Emitting Properties of InGaAs/GaAs Uncapped Quantum Dots by <i>γ</i>-Irradiation (2025)
-
Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots (2025)
-
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
46 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
Showing 5 of 46 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
28 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 28 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
23 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 23 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
21 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 21 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
21 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 21 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
14 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Thermal stability study of gallium nitride based magnetic field sensor
Showing 5 of 14 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
12 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of simulations of double graded InGaN solar cell structures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 12 shared publications
Baolai Liang
University of California, Los Angeles (US)
9 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
Showing 5 of 9 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
9 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 9 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
9 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 9 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
8 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 8 shared publications
Satish Shetty
University of Arkansas at Fayetteville
8 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 8 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
7 shared publications
- Strain-driven anomalous elastic properties of GeSn thin films
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Chen Li
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Calbi Gunder
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Similar Researchers
Based on overlapping research topics
Md Helal Uddin Maruf
University of Arkansas at Fayetteville
GaN-based semiconductor devices and materials
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Morgan E. Ware
University of Arkansas at Fayetteville
Quantum Dots Synthesis And Properties
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Gregory J. Salamo
University of Arkansas at Fayetteville
Quantum Dots Synthesis And Properties
GaN-based semiconductor devices and materials
Semiconductor materials and devices
Min Khadka
University of Arkansas at Little Rock
Quantum Dots Synthesis And Properties
Nanoparticles: synthesis and applications
Materials Science Research
Entidhar Alkuam
University of Arkansas at Little Rock
Semiconductor materials and devices
Nanoparticles: synthesis and applications
Photovoltaic System Reliability
Robert E. Gawley
University of Arkansas at Fayetteville
GaN-based semiconductor devices and materials
Semiconductor materials and devices
Materials Science Research