G
Gregory J. Salamo Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
High Impact
Distinguished Professor
faculty
51 h-index
706 pubs
15,523 cited
Research Areas
Biography and Research Information
OverviewAI-generated summary
Gregory J. Salamo is a Distinguished Professor at the University of Arkansas at Fayetteville. His research focuses on materials science, particularly the development and characterization of semiconductor materials for optoelectronic and electronic applications. He has a significant publication record, with over 700 publications and more than 15,000 citations, reflecting his high-impact research contributions. His work has been supported by substantial federal funding, including nearly $20 million in grants from the National Science Foundation (NSF). These grants have supported projects related to novel semiconductor materials for infrared detection and the development of research fabrication facilities. Salamo leads a research group and maintains an active lab website, indicating ongoing research activities and mentorship. His scholarly output includes recent publications on GeSn lasers, quantum wells for infrared optoelectronics, and the growth of single crystalline Ge thin films, demonstrating continued engagement with advanced semiconductor device research. He has also collaborated with several colleagues at the University of Arkansas, including G. M. Jacobsen and Morgan E. Ware, on shared publications.
Metrics
- h-index: 51
- Publications: 706
- Citations: 15,523
Selected Publications
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)
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Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well (2024)
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Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024)
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Feasibility Study of Photonic Integrated Circuits on Sapphire Platform (2024)
Federal Grants 2 $19,124,748 total
NSF
Co-PI
Oct 2021 - Sep 2026
Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility
Collaboration Network
Top Collaborators
Yuriy I. Mazur
University of Arkansas at Fayetteville
37 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
Showing 5 of 37 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
29 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
Showing 5 of 29 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
24 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 24 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
23 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
Showing 5 of 23 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
16 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 16 shared publications
Wei Du
University of Arkansas at Fayetteville
12 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 12 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
10 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 10 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
10 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 10 shared publications
Baolai Liang
University of California, Los Angeles (US)
9 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
Showing 5 of 9 shared publications
M. D. Teodoro
Universidade Federal de São Carlos (BR)
8 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
Showing 5 of 8 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
8 shared publications
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Strain-driven anomalous elastic properties of GeSn thin films
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
Showing 5 of 8 shared publications
Satish Shetty
University of Arkansas at Fayetteville
8 shared publications
In database
- A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor
- Thermal stability study of gallium nitride based magnetic field sensor
- Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 8 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 8 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
8 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 8 shared publications
Rahul Kumar
Oldham Council (GB)
7 shared publications
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
- Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
- Temperature dependent behavior of sub-monolayer quantum dot based solar cell
Showing 5 of 7 shared publications
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