Gregory J. Salamo

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Federal Grant PI High Impact

Distinguished Professor

University of Arkansas primary UA Little Rock UAMS

Also affiliated: University of Central Florida (2005–2006); University of Jordan (2009); California Institute of Technology (2002); U.S. National Science Foundation (2002); California NanoSystems Institute (2010–2014); National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); University of California, Los Angeles (2010–2014); DEVCOM Army Research Laboratory (1998–2002); University of New Mexico (1999); United States Naval Academy (1993); University College Cork (2010); Center for NanoScience (2014–2019); Yale University (2014); Center for Nanoscale Science and Technology (2009–2016); Ohio University (2008); V.E. Lashkaryov Institute of Semiconductor Physics (2017); The Ark (2010); US Night Vision (United States) (1988–1993); Material Sciences (United States) (2013); National Institute for Research and Development of Isotopic and Molecular Technologies (2009); Adelphi Laboratory Center (1999); Rockwell Automation (United States) (1987–1993); The University of Texas at Austin (2005–2008)

Faculty Researcher

51 h-index 706 pubs 15,742 cited

Research Areas

Biomedical Subjects

Links

ORCID Google Scholar Lab Website Research Group

OverviewAI-generated summary

Gregory J. Salamo, a Distinguished Professor at the University of Arkansas at Fayetteville, focuses on semiconductor materials and devices, particularly those related to optoelectronics and photonics. His research group investigates materials such as Germanium-Tin (GeSn) alloys and Indium Arsenide (InAs) nanostructures. Recent work includes the development of electrically injected GeSn lasers emitting up to 2.7 μm and InAs nanostructures for solar cell applications, aiming to improve efficiency through quantum dot integration.

Salamo's research also encompasses the study of dislocation generation, strain relief, and diffusion in semiconductor epilayers, employing techniques like molecular beam epitaxy (MBE) to grow single-crystalline Ge thin films. His group explores SiGeSn quantum wells for integrated photonics and investigates methods for modeling strain in materials with lattice mismatch. He is a co-PI on an NSF grant supporting the Center for High-Frequency Electronics and Circuits for Communication Systems (CHECCS).

With a career marked by extensive publication and citation, Salamo has authored over 700 publications and maintains an h-index of 51. He collaborates closely with several colleagues at the University of Arkansas, including Yuriy I. Mazur and Shui-Qing Yu.

Metrics

h-index: 51
Publications: 706
Citations: 15,742

Selected Publications

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)

DOI OpenAlex
Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)

DOI OpenAlex
Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)

DOI OpenAlex
Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)

DOI OpenAlex
Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)

DOI OpenAlex
Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)

DOI OpenAlex
Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)

DOI OpenAlex
Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)

1 citation DOI OpenAlex
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)

3 citations DOI OpenAlex
Optical spin polarization by coherent magnetoabsorption generation (2025)

2 citations DOI OpenAlex
Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025)

DOI OpenAlex
MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)

4 citations DOI OpenAlex
Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)

3 citations DOI OpenAlex
Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well (2024)

DOI OpenAlex
Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024)

6 citations DOI OpenAlex