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Current · Arkansas
Last published
2026
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OpenAlex · ORCID
Refreshed
2026-10-06
J
Joshua M. Grant
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Also affiliated: Wilkes University (2022)
13 h-index
38 pubs
954 cited
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Joshua M. Grant's research focuses on the development and characterization of semiconductor materials, particularly germanium-tin (GeSn) alloys, for optoelectronic applications. His work investigates the fabrication of GeSn-based photodetectors and lasers integrated onto silicon platforms, aiming for mid-infrared and shortwave infrared imaging. Grant has explored techniques such as ultra-high vacuum chemical-vapor deposition (UHV-CVD) for growing high-quality GeSn films with varying tin compositions. His publications detail the performance of these materials in prototype devices, including photodiodes and electrically injected lasers operating at specific wavelengths and temperatures. Grant collaborates with several faculty members at the University of Arkansas at Fayetteville, including Wei Du, Solomon Ojo, Hryhorii Stanchu, and Shui-Qing Yu, with whom he has co-authored multiple publications. His research contributions are reflected in a h-index of 13, with over 40 publications and nearly 1000 citations.
Metrics
- h-index: 13
- Publications: 38
- Citations: 954
Selected Publications
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes (2025)
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Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024)
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In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes (2024)
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
28 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
Showing 5 of 28 shared publications
Wei Du
University of Arkansas at Fayetteville
24 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
Showing 5 of 24 shared publications
Baohua Li
13 shared publications
In database
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Comparison study of the low temperature growth of dilute GeSn and Ge
Showing 5 of 13 shared publications
Grey Abernathy
University of Arkansas at Fayetteville (US)
12 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 12 shared publications
Greg Sun
11 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 11 shared publications
Joe Margetis
Arizona State University (US)
11 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 11 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
11 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
Showing 5 of 11 shared publications
Perry C. Grant
University of Arkansas at Fayetteville
11 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
- Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement
Showing 5 of 11 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
11 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
Showing 5 of 11 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
11 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 11 shared publications
Richard Soref
University of Massachusetts Boston (US)
10 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 10 shared publications
Wei Dou
University of Arkansas at Fayetteville (US)
9 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
- Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement
Showing 5 of 9 shared publications
John Tolle
ASM International (US)
9 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 9 shared publications
Baohua Li
9 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 9 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
9 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
Showing 5 of 9 shared publications
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