Match tier
Likely match
Presence
Formerly Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-16
C
Calbi Gunder
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Formerly Arkansas Affiliated with University of Arkansas through 2024; recent publications list United States Air Force Research Laboratory, Wright-Patterson Air Force Base.
Faculty Researcher
2 h-index
11 pubs
30 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Calbi Gunder's research focuses on the molecular beam epitaxy (MBE) growth of semiconductor thin films, particularly germanium (Ge) and germanium-tin (GeSn) alloys. Their work investigates the epitaxial growth of these materials on various substrates, including sapphire and gallium arsenide (GaAs). Recent publications explore the controlled growth of single crystalline Ge thin films on c-plane sapphire and the development of direct bandgap GeSn on GaAs (001) using MBE techniques. Gunder also studies the interface-driven growth modes of two-dimensional materials like GaSe on three-dimensional substrates such as GaAs, considering distinct crystallographic orientations. Collaborations include researchers from the University of Arkansas at Fayetteville, with whom Gunder has co-authored multiple publications.
Metrics
- h-index: 2
- Publications: 11
- Citations: 30
Selected Publications
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy (2024)
-
Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy (2023)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023)
-
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023)
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Single crystalline Ge thin film growth on <i>c</i> -plane sapphire substrates by molecular beam epitaxy (MBE) (2022)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i> -plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 9 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
9 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i> -plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 9 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
8 shared publications
In database
- Single crystalline Ge thin film growth on <i>c</i> -plane sapphire substrates by molecular beam epitaxy (MBE)
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 8 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
5 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Aida Sheibani
University of Arkansas at Fayetteville
4 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Serhii Kryvyi
University of Arkansas at Fayetteville
4 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Hryhorii Stanchu
University of Arkansas at Fayetteville
4 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
3 shared publications
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Samir K. Saha
University of Arkansas at Fayetteville (US)
3 shared publications
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy
Chen Li
University of Arkansas at Fayetteville
3 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Rahul Kumar
2 shared publications
- Single crystalline Ge thin film growth on <i>c</i> -plane sapphire substrates by molecular beam epitaxy (MBE)
- Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy
Krista R. Khiangte
Indian Institute of Technology Gandhinagar (IN)
2 shared publications
- Single crystalline Ge thin film growth on <i>c</i> -plane sapphire substrates by molecular beam epitaxy (MBE)
- Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy
Mohammad Zamani Alavijeh
2 shared publications
In database
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
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