Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
F
Fernando Maia de Oliveira
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Professor Adjunto
Also affiliated: Universidade Federal de São Carlos (2018–2023); Universidade Estadual do Centro-Oeste (2017); Universidade Federal do Pampa (2015); Universidade Federal de Alagoas (1996–2010)
9 h-index
64 pubs
339 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Fernando Maia de Oliveira's research encompasses diverse areas, including the larvicidal activity of plant extracts against disease vectors and the electrochemical determination of compounds in biological samples. He has investigated the modulation of inflammatory processes using plant extracts in animal models and studied the electrochemical behavior of cotinine at boron-doped diamond electrodes. His work also extends to materials science, with a publication on the quantitative correlation of dislocation generation and strain relief in GeSn epilayers. Oliveira's scholarship metrics include an h-index of 10, with 64 total publications and 425 citations. He has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Gregory J. Salamo, Hryhorii Stanchu, and Shui-Qing Yu.
Metrics
- h-index: 9
- Publications: 64
- Citations: 339
Positions
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Professor Adjunto publications 2020–2026University of Arkansas at Fayetteville Listing
Selected Publications
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn (2026)arXiv (Cornell University) OpenAlex
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)arXiv (Cornell University) OpenAlex
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Plasma-Enhanced Graphene Coatings on Ti-6Al-4V: Insights from Non-Destructive Characterization (2026)
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Plasma-Enhanced Graphene Coatings on Ti-6Al-4V: Insights from Non-Destructive Characterization (2026)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
Collaboration Network
Top Collaborators
Yuriy I. Mazur
University of Arkansas at Fayetteville
36 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- GaAs layer on c-plane sapphire for light emitting sources
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 36 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
30 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- GaAs layer on c-plane sapphire for light emitting sources
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 30 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
20 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- GaAs layer on c-plane sapphire for light emitting sources
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 20 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
20 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 20 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
13 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 13 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
12 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- GaAs layer on c-plane sapphire for light emitting sources
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 12 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
12 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 12 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
12 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 12 shared publications
Dinesh Baral
University of Arkansas at Fayetteville
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
8 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
Showing 5 of 8 shared publications
Calbi Gunder
United States Air Force Research Laboratory
8 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 8 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
7 shared publications
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 7 shared publications
Wei Du
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 7 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
6 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth
Showing 5 of 6 shared publications
Chen Li
University of Arkansas at Fayetteville
6 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 6 shared publications
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