Match tier
Likely match
Presence
Current · Arkansas
Last published
2025
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
A
Abdulla Said
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Faculty Researcher
7 h-index
11 pubs
93 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Abdulla Said's research focuses on the development and characterization of group-IV semiconductor materials, particularly GeSn and SiGeSn alloys, for optoelectronic applications. His work investigates the growth of these materials on various substrates, including Si and GaAs, using molecular beam epitaxy. Said has published research on the optical and structural properties of GeSn/SiGeSn multiple quantum wells, exploring their potential for mid-infrared lasers and enhanced carrier collection efficiency for integrated photonics. He also examines the impact of annealing processes and dislocations on the photoluminescence characteristics of GeSn alloys. Said has collaborated with multiple researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Shui-Qing Yu, Solomon Ojo, and Sudip Acharya, on shared publications.
Metrics
- h-index: 7
- Publications: 11
- Citations: 93
Selected Publications
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
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Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
-
Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022)
-
Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys (2021)
Collaboration Network
Top Collaborators
Hryhorii Stanchu
University of Arkansas at Fayetteville
9 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 9 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 9 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
7 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 7 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
7 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 7 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
6 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
Showing 5 of 6 shared publications
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
5 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Emmanuel Wangila
University of Arkansas at Fayetteville
4 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Wei Du
University of Arkansas at Fayetteville
4 shared publications
In database
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
3 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Grey Abernathy
University of Arkansas at Fayetteville (US)
3 shared publications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Joshua M. Grant
University of Arkansas at Fayetteville
3 shared publications
In database
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Baohua Li
3 shared publications
In database
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Sylvester Amoah
University of Arkansas at Fayetteville
3 shared publications
In database
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
3 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
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