Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
F
Fernando Maia de Oliveira
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Professor Adjunto
Also affiliated: Universidade Federal de São Carlos (2018–2023); Center for NanoScience (2026); Universidade do Estado do Rio de Janeiro (2012); Centro de Investigación Docencia y Consultoria Administrativa (2016); Instituto de Ensino e Pesquisa Santa Casa (2012); Ministério da Ciência e Tecnologia (2016); Instituto de Botânica (1986); Universidade Estadual do Centro-Oeste (2017); Escola da Cidade (2014); Materia Nova (2014); Departamento de Ciência e Tecnologia (2014); Serviço Nacional de Aprendizagem Comercial (2014); Fundação Oswaldo Cruz (2012); Universidade Federal do Pampa (2015); Universidade Federal de Alagoas (1996–2011)
Faculty Researcher
10 h-index
63 pubs
415 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Fernando Maia de Oliveira's research focuses on the study of semiconductor materials and devices, particularly germanium-tin (GeSn) alloys and gallium nitride (GaN) based sensors. His work investigates the fundamental properties and growth mechanisms of these materials, including dislocation generation, strain relief, and dopant diffusion during thermal annealing processes. Oliveira has published research on the coherent-interface-induced strain in materials with large lattice mismatch and explored new approaches for modeling Raman shifts in these systems. His recent publications also detail the growth of Ge and direct bandgap GeSn on GaAs and sapphire substrates using molecular beam epitaxy. Furthermore, his research includes the thermal stability and sensitivity of Hall sensors based on gallium nitride heterostructures, and the role of dislocations in tin diffusion in GeSn layers. Oliveira has a significant publication record, with 62 total publications and 407 citations, and an h-index of 10. He has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Gregory J. Salamo, Hryhorii Stanchu, and Shui-Qing Yu.
Metrics
- h-index: 10
- Publications: 63
- Citations: 415
Selected Publications
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn (2026)arXiv (Cornell University) OpenAlex
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Plasma-Enhanced Graphene Coatings on Ti-6Al-4V: Insights from Non-Destructive Characterization (2026)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Temperature dependent optical properties of ultrathin InAs quantum well (2024)
Collaboration Network
Top Collaborators
Yuriy I. Mazur
University of Arkansas at Fayetteville
31 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 31 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
28 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 28 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
17 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
Showing 5 of 17 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
17 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
Showing 5 of 17 shared publications
Shui-Qing Yu
National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
13 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
Showing 5 of 13 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
11 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 11 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
10 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 10 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
8 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 8 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
8 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
Showing 5 of 8 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
8 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Showing 5 of 8 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
6 shared publications
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 6 shared publications
Wei Du
University of Arkansas at Fayetteville
6 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 6 shared publications
Dinesh Baral
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
Showing 5 of 6 shared publications
Chen Li
University of Arkansas at Fayetteville
5 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Satish Shetty
University of Arkansas at Fayetteville
5 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Dual-channel 2DEG micro-Hall effect sensor for extreme environments
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