Serhii Kryvyi Source Confirmed
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Research Associate NANO 109
University of Arkansas at Fayetteville
postdoc
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Biography and Research Information
OverviewAI-generated summary
Serhii Kryvyi is a researcher at the University of Arkansas at Fayetteville, focusing on materials science and semiconductor devices. His work has investigated the structural and electronic properties of various materials, including III-nitrides, zinc oxide alloys, and germanium. Kryvyi has explored spontaneous polarization models and induced electric fields in multi-quantum wells, as well as the growth and characterization of polar and non-polar semiconductor superlattices and core-shell nanowires using molecular beam epitaxy (MBE). His research also includes studies on palladium-based contacts for gallium nitride (GaN) applications in laser diodes and the behavior of materials under specific conditions, such as large negative magnetoresistance in antiferromagnetic materials. Kryvyi has authored or co-authored 46 publications, accumulating 238 citations, and holds an h-index of 9. He has collaborated extensively with researchers at the University of Arkansas, including Fernando Maia de Oliveira, Yuriy I. Mazur, Hryhorii Stanchu, and Mohammad Zamani‐Alavijeh.
Metrics
- h-index: 9
- Publications: 46
- Citations: 238
Selected Publications
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025) DOI
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025) DOI
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
- Large negative magnetoresistance in antiferromagnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">G</mml:mi><mml:msub><mml:mi mathvariant="normal">d</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> (2025) DOI
- Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode (2024) DOI
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
- Effects of ion implantation with arsenic and boron in germanium-tin layers (2024) DOI
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024) DOI
- Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes (2023) DOI
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023) DOI
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