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Presence
Current · Arkansas
Last published
2026
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OpenAlex · ORCID
Refreshed
2026-08-15
S
Serhii Kryvyi
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Research Associate NANO 109
Also affiliated: National Academy of Sciences of Ukraine (2015–2020); Center for NanoScience (2026); Institute of Physics (2019–2024); V.E. Lashkaryov Institute of Semiconductor Physics (2015–2022); FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (2023); Polish Academy of Sciences (2019–2025)
Postdoc Researcher
10 h-index
54 pubs
276 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Serhii Kryvyi's research focuses on the growth and characterization of semiconductor materials and heterostructures. His work includes investigating the structural, optical, and electronic properties of various quantum well systems, such as III-nitrides, GeSn/Ge, and ZnO/MgO superlattices. Kryvyi has explored the influence of strain, polarization, and dislocations on material properties, contributing to the understanding of their impact on device performance. His research also extends to the development of palladium-based contacts for applications in laser diodes and the analysis of strain fields in nanostructures.
His publications detail advancements in Metalorganic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE) growth techniques. Kryvyi collaborates with researchers at the University of Arkansas at Fayetteville, including Fernando Maia de Oliveira, Yuriy I. Mazur, Hryhorii Stanchu, and Gregory J. Salamo, with multiple shared publications. He has an h-index of 9, with 54 publications and 265 citations.
Metrics
- h-index: 10
- Publications: 54
- Citations: 276
Selected Publications
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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From Pd to Pd/Au and Pd/Ni/Au: Structural and interfacial characterization of ohmic contacts to p-GaN (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Large negative magnetoresistance in antiferromagnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mi mathvariant="normal">G</mml:mi> <mml:msub> <mml:mi mathvariant="normal">d</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:mi mathvariant="normal">S</mml:mi> <mml:msub> <mml:mi mathvariant="normal">e</mml:mi> <mml:mn>3</mml:mn> </mml:msub> </mml:mrow> </mml:math> (2025)
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Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode (2024)
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
Collaboration Network
Top Collaborators
Yuriy I. Mazur
Center for NanoScience
13 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 13 shared publications
Fernando Maia de Oliveira
Center for NanoScience
10 shared publications
In database
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 10 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
10 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 10 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 9 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
8 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 8 shared publications
Mohammad Zamani‐Alavijeh
Center for NanoScience
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Showing 5 of 7 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells
Wei Du
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Nirosh M. Eldose
Center for NanoScience
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Dinesh Baral
Center for NanoScience
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Calbi Gunder
University of Arkansas at Fayetteville
4 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Emmanuel Wangila
University of Arkansas at Fayetteville
4 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Aida Sheibani
University of Arkansas at Fayetteville
4 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Diandian Zhang
Center for NanoScience
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
I. Levchenko
Institute of High Pressure Physics (PL)
3 shared publications
- Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
- Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode
- From Pd to Pd/Au and Pd/Ni/Au: Structural and interfacial characterization of ohmic contacts to p-GaN
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