Match tier
Likely match
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
M
Mohammad Zamani‐Alavijeh
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: Center for NanoScience (2026); Center for Nanoscale Science and Technology (2022)
Faculty Researcher
7 h-index
24 pubs
120 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Mohammad Zamani‐Alavijeh's research investigates semiconductor materials and devices, focusing on the growth and characterization of quantum well structures for optoelectronic applications. His work includes studies on GeSn/SiGeSn multiple quantum wells and strained GeSn/Ge multiple quantum well structures using molecular beam epitaxy (MBE). He also examines heterojunctions, such as β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>, and the properties of materials like gallium nitride for magnetic field sensors and nickel nano-films for nonlinear optical applications.
Metrics
- h-index: 7
- Publications: 24
- Citations: 120
Selected Publications
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
-
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
-
Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
-
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
-
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
-
Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
-
Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction (2022)
Collaboration Network
Top Collaborators
Yuriy I. Mazur
Center for NanoScience
15 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 15 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
14 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 14 shared publications
Fernando Maia de Oliveira
Center for NanoScience
12 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 12 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 9 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
7 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 7 shared publications
Nirosh M. Eldose
Center for NanoScience
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 7 shared publications
Serhii Kryvyi
Center for NanoScience
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Showing 5 of 7 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
6 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 6 shared publications
Calbi Gunder
United States Air Force Research Laboratory
6 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Showing 5 of 6 shared publications
Dinesh Baral
Center for NanoScience
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Morgan E. Ware
Center for Nanoscale Science and Technology
4 shared publications
In database
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Mourad Benamara
Center for NanoScience
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Aida Sheibani
Smart Material (Germany)
4 shared publications
In database
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Malak Refaei
University of Arkansas at Fayetteville (US)
3 shared publications
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
3 shared publications
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
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