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Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-07
M
Mohammad Zamani‐Alavijeh
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7 h-index
25 pubs
122 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Mohammad Zamani‐Alavijeh's research focuses on the optical and structural properties of semiconductor materials for optoelectronic applications. His work includes the investigation of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics and the characterization of strained GeSn/Ge multiple quantum well structures. He also studies thermally-induced nonlinear optical properties of silver nano-films and the properties of Au–Ag–Al nano-alloy thin films for photonic applications. Zamani‐Alavijeh has explored the growth of Ge and direct bandgap GeSn on GaAs, as well as band offsets in Ga2O3/Ga2O3 heterojunctions.
Metrics
- h-index: 7
- Publications: 25
- Citations: 122
Selected Publications
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024)
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The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Thermal stability study of gallium nitride based magnetic field sensor (2023)
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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
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Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
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Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction (2022)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
15 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 15 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
15 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 15 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
12 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Thermal stability study of gallium nitride based magnetic field sensor
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 12 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 9 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
7 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 7 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Thermal stability study of gallium nitride based magnetic field sensor
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
Showing 5 of 7 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Morgan E. Ware
Center for Nanoscale Science and Technology
6 shared publications
In database
- Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime
- Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance
- Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
Showing 5 of 6 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
6 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 6 shared publications
Calbi Gunder
United States Air Force Research Laboratory
6 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Showing 5 of 6 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Self-assembled stoichiometric barium titanate thin films grown by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Mirsaeid Sarollahi
University of Arkansas at Fayetteville
5 shared publications
In database
- Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime
- Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Malak Refaei
University of Arkansas at Fayetteville (US)
5 shared publications
- Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime
- Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Dinesh Baral
University of Arkansas at Fayetteville
5 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)
Aida Sheibani
Ferro (United States)
4 shared publications
In database
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
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